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Preparation method of nitride film

A nitride and thin film technology, which is applied in the field of nitride thin film preparation, can solve the problems of material surface quality degradation, affecting device performance, etc., and achieve the effect of improving flatness, enhancing migration ability, and good performance

Active Publication Date: 2017-03-29
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different from heteroepitaxy technology, GaN substrate homoepitaxy is not affected by substrate lattice mismatch, and usually does not need to grow a low-temperature nucleation layer; however, due to the adsorption of impurities on the substrate surface and polishing scratches, damage After the GaN substrate is homoepitaxially epitaxy, a large number of pyramid-shaped microstructures are formed on the surface, causing surface undulations and valley-shaped surfaces, resulting in a decrease in the surface quality of the material and affecting the performance of the device (Phys.Status SolidiA 213, (2016) p1236– 1240; J. Cryst. Growth 371, (2013) p7–10)

Method used

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  • Preparation method of nitride film
  • Preparation method of nitride film
  • Preparation method of nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) Select a c-plane self-supporting gallium nitride substrate, use acetone, ethanol and deionized water to sonicate for 5 minutes, and finally use high-purity nitrogen to blow off its moisture;

[0033] 2) Transfer the cleaned gallium nitride substrate into the MOCVD system, with the front side - (0001) facing up, the pressure of the reaction chamber is 100torr, and the reaction chamber is NH 3 / H 2 Mixed atmosphere (the ratio of ammonia in the mixed gas is 5%), the temperature of the reaction chamber is raised to 1050°C, and the heat treatment time is 300s;

[0034] 3) Keeping the pressure and temperature constant, feed the Group V source (ammonia) and Group III source (trimethylgallium) at the same time, with the V / III ratio of 3000, in H 2 Grow for 1 second under carrier gas conditions;

[0035] 4) Keep the pressure, temperature, and ammonia constant, stop feeding the reaction source trimethylgallium, and the process lasts for 1 second;

[0036] 5) Steps 3) and 4)...

Embodiment 2

[0039] 1) Select a self-supporting gallium nitride substrate on the a side, use acetone, ethanol and deionized water to sonicate for 5 minutes, and finally use high-purity nitrogen to blow off its moisture;

[0040] 2) Transfer the cleaned gallium nitride substrate into the MOCVD system, face a upwards, the pressure of the reaction chamber is 500torr, and the reaction chamber is NH 3 / H 2 Mixed atmosphere (the ratio of ammonia gas in the mixed gas is 10%), the temperature of the reaction chamber is raised to 850°C, and the heat treatment time is 600s;

[0041] 3) Keeping the pressure and temperature constant, feed the V-group source (ammonia) and III-group source (diethylgallium, trimethylindium) at the same time, with the V / III ratio of 5000, in the hydrogen-nitrogen mixed gas (1 : 1) grow for 10 seconds under the condition of carrier gas;

[0042] 4) Keep the pressure, temperature, and ammonia constant, and stop feeding the Group III sources of diethylgallium and trimethylin...

Embodiment 3

[0046] 1) Select an m-plane self-supporting gallium nitride substrate, use acetone, ethanol and deionized water to sonicate for 5 minutes, and finally use high-purity nitrogen to blow off its moisture;

[0047] 2) Transfer the cleaned gallium nitride substrate into the MOCVD system, with the m side up, the pressure of the reaction chamber is 50torr, and the reaction chamber is NH 3 / H 2 Mixed atmosphere (the ratio of ammonia in the mixed gas is 30%), the temperature of the reaction chamber is raised to 1100 ° C, and the heat treatment time is 30;

[0048] 3) Keeping the pressure and temperature constant, feed the group V source (ammonia) and group III source (trimethylgallium, trimethylaluminum) at the same time, with the V / III ratio of 1000, and grow under the condition of hydrogen carrier gas 30 seconds;

[0049] 4) Keep the pressure, temperature, and ammonia constant, stop feeding the reaction sources trimethylgallium and trimethylaluminum, and the duration of this proces...

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Abstract

The invention discloses a preparation method of a nitride film. The preparation method comprises the following steps that in the homoepitaxy growing process of nitride, V-family source gas is delivered in a reaction room continuously; and the flow quantity of III-family source gas delivered in the reaction room are periodically modulated. According to the preparation method of the nitride film, by modulating the size of the III-family source gas flow periodically, the horizontal migration ability of III-family source atoms is strengthened, surface defects are reduced, crystallization quality is improved, and surface flatness is improved; and the preparation method is economical, simple and easy to operate, the obtained nitride film material is good in performance, and the preparation method is an effective solution for high-quality and low-cost growth of the nitride epitaxial thin film.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a nitride thin film. Background technique [0002] Group III nitrides (including gallium nitride, aluminum nitride, aluminum gallium nitride, indium nitride, indium gallium nitride, indium aluminum gallium nitride, etc.), the band gap can be adjusted between 0.7eV-6.28eV, Covers the entire mid-infrared, visible, and ultraviolet bands. In optoelectronic applications, such as white light diodes (LEDs), blue lasers (LDs), and ultraviolet detectors, they have achieved important applications and developments. In addition, gallium nitride (GaN) material, one of the representatives of the third-generation semiconductors, has a direct band gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity, as well as high thermal and chemical stability. It can be used to make high-temperature, high-frequency, high-pow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/455C23C16/02
CPCC23C16/0209C23C16/303C23C16/45523
Inventor 罗伟科李忠辉杨乾坤李亮
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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