Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for metal nanometer/micrometer dendritic crystal ordered array

An ordered array, nano-micro technology, applied in the field of nano-materials, can solve the problem of no systematic method for controlling the growth of ordered arrays of metal nano-micro dendrites, limit the application of metal nano-micro dendrites, and cannot control metal nano-micro dendrites Shape, size, thickness and other issues, to achieve the effect of short production time, easy operation, and controllable size

Inactive Publication Date: 2017-03-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF6 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional preparation of metal nano-micron dendrites is not only difficult to order, but also unable to control the shape, size, thickness and other characteristics of metal nano-micron dendrites.
These factors limit the application of metal nano-micro dendrites
[0003] At present, there is no method to systematically control the growth of ordered arrays of metal nano-micro dendrites

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for metal nanometer/micrometer dendritic crystal ordered array
  • Preparation method for metal nanometer/micrometer dendritic crystal ordered array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] S1, preparation of conductive array substrate: uniformly coat the photoresist on the conductor with a coating thickness of 1 μm, irradiate with 380nm ultraviolet light for 6s, and bake at 120°C for 30min to prepare an array with ordered conductive holes The conductive array substrate, the diameter of the conductive hole is 5 μm, and the hole spacing is 20 μm;

[0028] S2, preparation of ordered arrays of silver nanodendrites: In a standard three-electrode electrolytic cell, the conductive array substrate prepared in S1 was used as the working electrode, the platinum sheet was used as the counter electrode, and Ag / AgCl sealed in a saturated KCl solution was used as the The reference electrode, silver nitrate and surfactant CTAB are used as the electrolyte, the dosage of CTAB is 1% of the molar concentration of the silver nitrate solution, and the control voltage is -0.8~0.2V. Silver nano dendrites are deposited, and the electrodeposition time is 5 minutes to 2 hours. Aft...

Embodiment 2

[0031] S1, preparation of conductive array substrate: uniformly coat the photoresist on the conductor with a coating thickness of 2 μm, irradiate with 220nm ultraviolet light for 3s, and bake at 70°C for 50min to obtain ordered conductive holes The conductive array substrate of the array has a conductive hole diameter of 2 μm and a hole spacing of 10 μm.

[0032] S2, preparation of ordered arrays of gold nanodendrites: in a standard three-electrode electrolytic cell, the conductive array substrate prepared in S1 was used as the working electrode, the platinum sheet was used as the counter electrode, and Ag / AgCl sealed in a saturated KCl solution was used as the The reference electrode, the chloroauric acid solution and the surfactant SDS are used as the electrolyte, the amount of SDS is 0.5% of the molar concentration of the chloroauric acid solution, and the control voltage is -1 to 0.5V. Controllable electrodeposition of gold nanodendrites, the electrodeposition time is 10 m...

Embodiment 3

[0035] S1, preparation of conductive array substrate: uniformly coat the photoresist on the conductor with a coating thickness of 0.5 μm, irradiate with 300nm ultraviolet light for 4 minutes, and bake at 90°C for 10 minutes to obtain an ordered conductive substrate. The conductive array substrate of the hole array, the diameter of the conductive holes is 2.5 μm, and the hole spacing is 15 μm.

[0036] S2, preparation of copper nanodendrite ordered array: In a standard three-electrode electrolytic cell, the conductive array substrate prepared in S1 was used as the working electrode, the platinum sheet was used as the counter electrode, and Ag / AgCl sealed in a saturated KCl solution was used as the Reference electrode, copper acetate and complexing agent EDTA as the electrolyte, the amount of EDTA is 0.2% of the molar concentration of the copper acetate solution, the control voltage is -3 ~ -0.2V, and the surface of the conductive array substrate can be controlled by voltammetry ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method for a metal nanometer / micrometer dendritic crystal ordered array. A conductive array substrate is used as a working electrode, an electrolyte comprises a metal salt solution and an additive with the dosage being 0-5% of the metal salt solution by molar concentration, and metal nanometer / micrometer dendritic crystals are electrically deposited on the surface of the substrate in a controlled mode through a volt-ampere method, so that the metal nanometer / micrometer dendritic crystal ordered array is obtained. The conductive array substrate is provided with an ordered conductive array, the additive comprises at least one of a complexing agent and a surfactant, and the additive is used for promoting the forming of the metal nanometer / micrometer dendritic crystals and regulating and controlling the morphology. According to the preparation method for the metal nanometer / micrometer dendritic crystal ordered array, the process is simple, operation is easy, the preparation time is short, efficiency is high, and the method is suitable for industrial production and application; and the obtained metal nanometer / micrometer dendritic crystal ordered array is controllable in shape, thickness and size.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a method for preparing an ordered array of metal nanometer dendrites. Background technique [0002] Metal nano-micro-dendritic ordered arrays have been a research hotspot in recent decades because of their wide application prospects. One of its very important applications is the regulation of plasmonic elements on metal surfaces and chemical and biomolecular sensing technologies based on this mechanism. Metal dendrite array structures enable high-throughput chemical and biomolecular sensing. In addition, the metal dendrite array can also be applied to fields such as catalysis of chemical reactions and fuel cells. The traditional preparation of metal nano-micro dendrites is not only difficult to make order, but also unable to control the shape, size, thickness and other characteristics of metal nano-micro dendrites. These factors limit the application of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/00B82Y40/00
CPCB82Y40/00C25D5/00
Inventor 吕维强石星逸牛英华
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com