Heterojunction solar cell device production method based on amorphous silicon thin films

Abstract

The invention discloses a heterojunction solar cell device production method based on amorphous silicon thin films. A monocrystalline silicon surface, which is uniformly provided with silver paste in a coated manner and is annealed, is provided with an i-type amorphous silicon thin film and a p-type amorphous silicon thin film in a deposited manner by adopting a plasma chemical vapor deposition method, and an anode conductive electrode layer is produced by adopting a magnetron sputtering method. Transmission and acquisition of photocarriers are effectively enhanced by the produced amorphous-crystal heterojunction, and at the same time, the deposited i-type amorphous silicon thin film is used as the buffer thin layer of the heterojunction thin film, and then objects of acquiring carriers and improving optical conversion efficiency are achieved. The heterojunction solar cell device based on the amorphous silicon thin films has advantages of large area, high efficiency, low costs, good stability, and applicability in photovoltaic devices used for power generation.

Description

technical field [0001] The invention relates to a preparation method of a solar cell device, in particular to a preparation method of an amorphous-crystal heterojunction solar cell device, which is applied in the technical field of inorganic material solar cells. Background technique [0002] Affected by the extreme shortage of high-purity silicon raw materials, the development of a new generation of amorphous silicon a-Si thin film solar cells is very important in today's solar photovoltaic industry. Amorphous thin film-crystalline silicon heterojunction structure is the best design to combine the advantages of both amorphous silicon and crystalline silicon solar cells. The basic structure of the amorphous silicon thin film heterojunction solar cell device is not a pn junction, but a pin junction. The heavily doped p and n regions form a built-in potential inside the battery to collect charges. Region i is the photosensitive region, which has a high absorption coefficient...

AI Technical Summary

Problems solved by technology

However, the production cost of the a-Si battery with p / i / n structure prepared by the existing technology is relatively high, the generation and collection ability of photoelectrons is not ideal enough, the conversion efficiency needs to be further improved, and the preparation process is relatively complicated, which is not conducive to the improvement of production capacity.

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