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THz modulator based on graphene-metal composite microstructure and preparation thereof

A metal microstructure and metal composite technology, which is applied in the fields of instruments, semiconductor/solid-state device manufacturing, and optics, can solve the problems of quality factor, adjustable performance, and modulation depth, etc., and achieve large modulation depth and large modulation depth , good effect of adjustable performance

Active Publication Date: 2017-02-22
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This patent uses a whole piece of graphene as the active region structure, and the quality factor, tunable performance and modulation depth are not particularly ideal

Method used

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  • THz modulator based on graphene-metal composite microstructure and preparation thereof
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  • THz modulator based on graphene-metal composite microstructure and preparation thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] see Figure 1 to Figure 5 As shown, the THz modulator of the graphene-metal composite microstructure is fabricated by the following steps:

[0059] (1) Fabrication of polymer flexible substrate layer 02: ordinary Si sheet is used as sacrificial layer 01, and the solution containing plastic polymer flexible substrate layer 02 is sprayed on it by spincoating method, and then dried in an oven About 30 minutes, the temperature range is 150-200 degrees, and then use a high-temperature furnace in an inert gas (or N 2 ) in a protective atmosphere to 300-400 (preferably 350 degrees), forming a uniform polymer flexible substrate layer 02 thin layer;

[0060] (2) Making an epitaxial layer doped with Si: form a doped semiconductor epitaxial layer 03 with a thickness of 1-10 μm by epitaxial growth method, and the doping concentration is 3×10 16 cm -3 , the electrical conductivity of the Si layer is 1-10Ω·cm, and the insulation is good, so as to reduce the loss;

[0061] (3) For...

Embodiment 2

[0082] The preparation method of the THz modulator based on the graphene-metal composite microstructure comprises the following steps:

[0083] (1) Making polymer flexible substrate layer

[0084] Using ordinary Si as a sacrificial layer, spray a solution containing a plastic flexible substrate on the sacrificial layer, dry it at 150°C for 40 minutes, and then heat it to 400°C under the protection of an inert gas for curing to obtain a polymer with a thickness of 1 μm. Flexible substrate layer;

[0085] (2) Fabrication of doped semiconductor epitaxial layer

[0086] A doped Si layer with a thickness of 1 μm was formed by epitaxial growth method, and the doping concentration was 10 15 cm -3 , the conductivity of the Si layer is 1Ω·cm;

[0087] (3) Making Al 2 o 3 Insulation-active region structure composite layer

[0088] (3-1) Atomic layer deposition of Al on doped semiconductor epitaxial layer 2 o 3 , formed at a temperature of 200 °C, and then rinsed with distilled ...

Embodiment 3

[0096] The preparation method of the THz modulator based on the graphene-metal composite microstructure comprises the following steps:

[0097] (1) Making polymer flexible substrate layer

[0098] Using ordinary Si as a sacrificial layer, spray a solution containing a plastic flexible substrate on the sacrificial layer, dry it at 200°C for 20 minutes, and then heat it to 300°C under the protection of an inert gas for curing to obtain a polymer with a thickness of 50 μm. Flexible substrate layer;

[0099] (2) Fabrication of doped semiconductor epitaxial layer

[0100] A doped Si layer with a thickness of 10 μm was formed by epitaxial growth method, and the doping concentration was 10 18 cm -3 , the electrical conductivity of the Si layer is 10Ω·cm;

[0101] (3) Making Al 2 o 3 Insulation-active region structure composite layer

[0102] (3-1) Atomic layer deposition of Al on doped semiconductor epitaxial layer 2 o 3 , formed at a temperature of 200 degrees Celsius, and ...

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Abstract

The invention relates to a THz modulator based on graphene-metal composite microstructure and preparation thereof. The THz modulator includes: a polymer flexible substrate layer; a doped semi-conductor epitaxial layer; a A1203 insulating-active region structure composite layer which grows on the doped semiconductor epitaxial layer and is composed by superposing at least one A1203 insulating-active region sub-structure which includes an A1203 insulating layer which is disposed therebelow and a graphene microstructure layer and a metal microstructure layer which grow on the A1203 insulating layer, the metal microstructure layer being disposed inside the graphene microstructure layer and is arranged spaced from the graphene microstructure layer to form the active sub-region structure of the THz; a metal layer which is vapor plated on one active sub-structure in the uppermost and processed to form a metal top electrode. Compared with prior art, according to the invention, the THz modulator can effectively regulate THz waves, has high quality factor, excellent adjustability and great modulation depth, etc.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, in particular to a THz modulator based on a graphene-metal composite microstructure and its preparation and application. Background technique [0002] Terahertz (THz) waves lie between microwave and infrared radiation in the electromagnetic spectrum, in the transition region from electronics to photonics, and have broad prospects in both basic research and practical applications. As a key component of waveguide technology, modulator is of great value and significance to promote the development of THz technology in object imaging, biological sample analysis and short-range wireless communication. In the THz band, due to the long wavelength, the carrier absorption is very serious (the absorption of free carriers is proportional to the square of the wavelength), and it will become difficult to control the wavelength. Traditional microwave and dielectric wav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/265G02F1/015
CPCG02F1/015H01L21/20H01L21/265
Inventor 何晓勇刘锋林方婷
Owner SHANGHAI NORMAL UNIVERSITY
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