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A chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor thin film materials

A thin film material and chemical method technology, applied in the field of material chemistry, can solve problems such as high reaction temperature, large environmental impact, and complicated operation, and achieve the effect of simple reaction device, low price, and simple operation

Active Publication Date: 2019-02-05
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation methods of multi-component compound semiconductors are constantly developing, but the methods commonly used at present use toxic substances, complex operations, high reaction temperature, great impact on the environment, and relatively high cost

Method used

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  • A chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor thin film materials
  • A chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor thin film materials
  • A chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor thin film materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Preparation: Clean the ordinary glass with detergent and deionized water ultrasonically for 20 minutes, and then use concentrated ammonia water (25% by mass) / hydrogen peroxide (30% by mass) / deionized water (1:2 by volume) :5) was treated at 80°C for 30 minutes, and finally ultrasonically cleaned with deionized water for 20 minutes. The treated ordinary glass was dried at 80°C and stored in a clean desiccator for later use. A copper-zinc alloy layer with a thickness of 100nm is sputtered on an ordinary glass substrate by magnetron sputtering technology, and the thickness of the film is controlled by a film thickness monitor (FTM). The obtained ordinary glass with a copper-zinc alloy layer is stored in a desiccator for later use.

[0038] 2. Reaction steps: Place the ordinary glass sputtered with a copper-zinc alloy layer with a thickness of 100nm in a closed container filled with iodine vapor to react for 8 hours at 45°C, take out the sample and transfer it to a clean ...

Embodiment 2

[0040] 1. Preparatory work: Same as in Example 1, a copper-zinc alloy layer with a thickness of 100 nm is sputtered on a common glass substrate.

[0041] 2. Reaction steps: Place the ordinary glass sputtered with a 100nm copper-zinc alloy layer in an airtight container filled with iodine vapor to react for 5 hours at 60°C, take out the sample and transfer it to a clean sample tube to avoid light and store it dry. The product obtained was a white film. Figure 4 It is the SEM photo of the obtained sample, the surface of the film is mainly composed of flake particles; Figure 5 It is the XRD pattern of the obtained sample, and the diffraction peak shown in the figure is Cu 2 ZnI 4 The (112) and (224) crystal planes, the figure shows that it has a strong (112) crystal plane dominant orientation.

Embodiment 3

[0043] 1. Preparatory work: Same as in Example 1, a copper-zinc alloy layer with a thickness of 100 nm is sputtered on a common glass substrate.

[0044] 2. Reaction steps: Place the ordinary glass sputtered with a 100nm copper-zinc alloy layer in a closed container filled with iodine vapor to react for 3 hours at 70°C, take out the sample and transfer it to a clean sample tube to avoid light and store it dry. The product obtained was a white film. Figure 6 It is the SEM photo film of the obtained sample, the surface is mainly composed of flakes and irregular particles; Figure 7 It is the XRD pattern of the obtained sample, and the diffraction peak shown in the figure is Cu 2 ZnI 4 The (112) and (224) crystal planes, the figure shows that it has a strong (112) crystal plane dominant orientation.

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Abstract

The invention belongs to chemical technical field, in particular to a chemical method for semiconductor film materials of ternary wide bandgap compound of synthesis of copper-zinc iodide. The method is that putting the copper-zinc alloy film into iodine vapor with a temperature of 45 DEG C to 80 DEG C for co-oxidation reaction of the copper-zinc alloy. The reaction time takes 3 to 8 hours. After reacting for certain time, Cu2ZnI4 films can be produced in situ on the surface of substrate, and that is the semiconductor film materials of the synthesis of the copper-zinc iodide. The preparation method does not require organic solvents to participate in the reaction or reaction medium. The crystal is crystallized well. The product can be used directly without complicated processing. The method has the advantages of simple operation, rapid reaction, better environmental protection, low energy consumption, low cost and good reproducibility. In addition, a film can be directly formed on the substrate surface in the method. The material is more beneficial for the application in photoelectric conversion devices.

Description

Technical field: [0001] The invention belongs to the technical field of material chemistry, and in particular relates to a chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor film materials. Background technique: [0002] Wide bandgap semiconductors are generally semiconductor materials with a bandgap greater than 2.0eV at room temperature, so they can transmit most of the sunlight and are widely used in the vicinity of optoelectronic devices. In recent years, new solar cells using low-cost and high-efficiency lead halide perovskite materials as light-absorbing layers have developed rapidly, and their photoelectric conversion efficiency has exceeded 20%, which is expected to be applied in solar energy utilization. However, based on lead halide perovskite solar cell devices, it is necessary to use expensive wide bandgap organic compounds (Sprio-MEOTAD, P3HT, etc.) as hole transport layer materials, and the price of these organic com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02425H01L21/02521H01L21/02614
Inventor 雷岩谷龙艳贾祖孝路凯张磊磊铁伟伟郑直
Owner XUCHANG UNIV
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