High-reliability surface mounted diode resistant to impact of heavy currents and preparation method of diode

A current impact, surface mount technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of limited operating temperature range and reliability, inability to use high reliability fields, and inability to work for a long time, so as to meet the requirements of sealing and Requirements for high dielectric withstand voltage, solve thermal expansion coefficient matching, and simple structure

Active Publication Date: 2017-02-01
济南市半导体元件实验所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plastic-encapsulated semiconductor devices, limited by the plastic encapsulation material and production process, cannot meet the operating temperature range and reliability requirements of harsh environments, especially in the case of humidity and heavy salt gas, and cannot work for a long time. The characteristics of the encapsulation determine It cannot be used in high reliability field

Method used

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  • High-reliability surface mounted diode resistant to impact of heavy currents and preparation method of diode
  • High-reliability surface mounted diode resistant to impact of heavy currents and preparation method of diode
  • High-reliability surface mounted diode resistant to impact of heavy currents and preparation method of diode

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preparation example Construction

[0070] The present application also provides a method for preparing the above-mentioned high-reliability surface-mounted diode with high current impact resistance, comprising the following steps:

[0071] 1) Chip sintering:

[0072] After the temperature of the chip bonder is stable, use the temperature measuring head of the spot thermometer to fully contact the preheating zone and sintering zone of the sintering furnace respectively, and control the surface temperature of the preheating zone and sintering zone within the specified range of process conditions;

[0073] Then take out the shell from the nitrogen cabinet, and then start supplying hydrogen and nitrogen to the sintering furnace, control the flow of hydrogen to at least 0.5L / min, and the flow of nitrogen to at least 5L / min;

[0074] Take one shell and put it in the preheating zone for preheating treatment, control the surface temperature of the preheating zone to 190℃±10℃, and the preheating time is 10min±6min;

[...

Embodiment 1

[0091] A method for preparing a high-reliability surface-mounted diode with high current impact resistance, comprising the following steps:

[0092] 1) Chip sintering:

[0093] After the temperature of the chip bonder is stable, use the temperature measuring head of the spot thermometer to fully contact the preheating zone and sintering zone of the sintering furnace respectively, and control the surface temperature of the preheating zone and sintering zone within the specified range of process conditions;

[0094] Then take out the shell from the nitrogen cabinet, and then start supplying hydrogen and nitrogen to the sintering furnace, controlling the flow of hydrogen to 0.6L / min and the flow of nitrogen to 7L / min;

[0095] Take one shell and put it in the preheating zone for preheating treatment, control the surface temperature of the preheating zone to 195°C, and the preheating time is 12 minutes;

[0096] Then put the shell into the sintering zone for sintering treatment, ...

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Abstract

The invention discloses a high-reliability surface mounted diode resistant to impact of heavy currents and a preparation method of the diode. According to the diode, a metal ceramic casing is used, a chip is fixed to a sintering area of the casing in a sintering manner via a solder, and a chip electrode and a casing electrode are connected and welded and sealed in parallel via an internal lead weld tab in a sintering manner. The problem that an original plastic packaging device cannot be applied to the field of high-reliability devices is solved, precise components in an electronic line are protected effectively and prevented from damage of different types of surge pulses, the surface mounted diode can be used to realize in-situ substitution under the condition that an original circuit does not change the size of a pad, namely a circuit board is not changed, the reliability is improved, the processing technology is simpler, and convenience is provided for batch production.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a high-reliability surface-mounted diode with high current impact resistance and a preparation method thereof. Background technique [0002] At present, in order to improve the reliability of the whole machine in various fields such as aviation systems, computer systems, and AC / DC power supplies, supporting devices are required to have the characteristics of large transient power, short response time, low leakage current, and small breakdown voltage deviation, which can effectively Protect the precision components in the electronic circuit from being damaged by various surge pulses. [0003] At present, most surface-mounted diode devices with a certain current or power are packaged in plastic. Plastic-encapsulated semiconductor devices, limited by the plastic encapsulation material and production process, cannot meet the operating temperature range and reliabilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/06H01L23/10H01L23/16H01L21/52
CPCH01L23/06H01L21/52H01L23/10H01L23/16
Inventor 张宝财马捷李东华侯杰王爱敏
Owner 济南市半导体元件实验所
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