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Film bulk acoustic resonator harmonic tuned amplifier module

A technology of thin-film bulk acoustic wave and amplification module, which is applied in the fields of microelectronics, communication and semiconductor, and can solve the problems of mutual interference, long distance of transistors and high loss

Active Publication Date: 2016-12-21
DYNAX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The disadvantage of the above method is that when the operating frequency band of the amplifier is not too high, the volume of the stub or lumped resonator is relatively large, and it is difficult to realize the internal harmonic matching design in the package, so it can only be used on the circuit board outside the package of the amplifier Harmonic tuning can be carried out only when the transistor is connected, and the harmonic short circuit of the transistor or the amplification circuit including the transistor can be realized.
However, harmonic tuning on the circuit board outside the amplifier package has the following problems: 1. The harmonic matching network needs to occupy a large amount of space, which is not conducive to miniaturization
2. The harmonic matching network is far away from the core component transistor of the power amplifier, and the loss is high, resulting in a decrease in the efficiency of the power amplifier
3. The harmonic matching network and the fundamental matching network interfere with each other, and the design is difficult

Method used

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  • Film bulk acoustic resonator harmonic tuned amplifier module

Examples

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Embodiment 1

[0044] The top view of the thin film bulk acoustic resonator harmonic tuning amplifying module provided by Embodiment 1 of the present invention is as follows: figure 1 shown. The amplifying module includes a transistor 12 , thin film bulk acoustic resonators 101 and 102 , a shell base 111 , a bonding wire 15 , a 1 / 4 wavelength microstrip line 16 and an internal matching capacitor 14 .

[0045] The transistors may be gallium nitride high electron mobility transistors, gallium arsenide high electron mobility transistors, metal oxide field effect transistors, lateral metal oxide field effect transistors, or junction transistors. The input terminal, the output terminal and the ground terminal of the transistor are respectively the gate, the drain and the source of the transistor or the base, the collector and the emitter of the transistor. In this embodiment, a gallium nitride high electron mobility transistor is used as an example for illustration.

[0046] like figure 1 and ...

Embodiment 2

[0063] The cross-sectional view of the input film bulk acoustic resonator harmonic tuning amplification module provided in Embodiment 2 is as follows: Figure 10 As shown, the equivalent circuit diagram is shown in Figure 11 shown.

Embodiment 3

[0066] The top view of the input-output thin-film bulk acoustic resonator harmonic tuning amplifier module provided in Embodiment 3 is as follows: Figure 12 As shown, the equivalent circuit diagram is shown in Figure 13 shown. The difference from Embodiment 1 or Embodiment 2 is that the transistor input terminal and output terminal perform harmonic tuning on the transistor at the same time. In this embodiment, both the input end of the transistor and the output end of the transistor are provided with an array of thin film bulk acoustic resonator groups, each array of thin film bulk acoustic resonator groups includes two thin film bulk acoustic resonator groups, and each group has a thin film bulk acoustic resonator group .

[0067] The thin film bulk acoustic resonator harmonic tuning amplification module provided in the third embodiment encapsulates the thin film bulk acoustic resonator group and the transistor on the same base to realize the open circuit of the second ha...

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Abstract

The invention discloses a film bulk acoustic resonator harmonic tuned amplifier module which comprises a signal input end and a signal output end, a transistor arranged between the signal input end and the signal output end and comprising a transistor input end, a transistor output end and a transistor grounding end, a first film bulk acoustic resonator group array electrically connected in series between the transistor output end and the signal output end, and / or a second film bulk acoustic resonator group array electrically connected in series between the transistor input end and the signal input end. The film bulk acoustic resonator group arrays are used for transistor high-harmonic circuit opening. Each film bulk acoustic resonator group array includes at least one film bulk acoustic resonator group. Each film bulk acoustic resonator includes a first electrode, a second electrode, and a dielectric film layer arranged between the two electrodes. The film bulk acoustic resonators tune the harmonic of the amplifier module in order to increase the efficiency of an amplifier based on the amplifier module and improve the linearity.

Description

technical field [0001] The invention relates to the technical fields of semiconductor, microelectronics and communication, in particular to a harmonic tuning and amplifying module of a thin film bulk acoustic wave resonator. Background technique [0002] With the rapid development of modern wireless communication technology, indicators such as high efficiency, high linearity and miniaturization put forward higher and higher requirements for the performance of power amplifiers. [0003] The drain efficiency equation for an amplifier is as follows: [0004] D E = P O u t , f P D C = P O u t , f ...

Claims

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Application Information

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IPC IPC(8): H03H9/17H03F1/02H03F1/32
Inventor 杨天应张乃千张永胜
Owner DYNAX SEMICON
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