Device and method for parallel mask-less scanning micro-nano processing based on atmospheric pressure plasma jet tube

Abstract

The invention discloses a device and method for parallel mask-less scanning micro-nano processing based on an atmospheric pressure plasma jet tube. The processing device comprises the atmospheric pressure plasma jet tube and a jet nozzle tip array integrated at the lower end of the jet tube, wherein a three-dimensional precise movable platform is disposed on the lower part of the jet nozzle tip array; the jet nozzle tip array comprises multiple jet nozzle tips which are equipped with micro-nano holes; and each jet nozzle tip is equipped with a hollow micro chamber which is shaped like an inverted pyramid. The atmospheric pressure plasma jet tube is placed in an atmospheric pressure environment; reaction gases are continuously injected into the jet tube; ionization takes place to the reaction gases under an electric field effect, so that reaction plasma is generated; and the jet nozzle tip array is used to form a plasma nano jet flow array. The three-dimensional precise movable platform controls a plasma micro jet flow device to generate motion relative to a processed sample, so that low-cost, high-precision and efficient mask-less etching, sedimentation processing and surface modification can be implemented to multiple materials. In this way, requirements for processing and application of a small batch of micro-nano devices with multiple varieties can be satisfied.

Description

technical field [0001] The invention relates to a micro-nano processing technology, in particular to a parallel maskless scanning micro-nano processing device and method based on an atmospheric pressure plasma nozzle. Background technique [0002] In the field of semiconductor technology and micro-electromechanical systems (MEMS), plasma etching and thin film deposition technology has high etching rate, good etching selectivity and good uniformity of thin film deposition. The reactive gas can process specific materials, and the solid product generated by the reactive gas discharge can be deposited on the surface of the sample to realize the advantages of thin film deposition, so it has been widely used. In practical applications, it is often necessary to etch and process patterns of different depths and shapes on the surface of the sample. In traditional plasma etching, macroscopic plasma is used, that is, the plasma acts on the entire sample surface. If selective etching i...

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Problems solved by technology

Ryutaro Shimane et al. used microfabrication technology to process 2 μm diameter cylindrical microhole nozzle arrays and exhaust grooves on silicon wafers, adsorbed pollen particles at the nozzle openings, and used the light irradiation effect generated by plasma to realize the protection of pollen particles. Surface modification, but this method cannot lead to plasma microjet flow, and the processed sample must be in contact with the nozzle, which is not suitable for scanning processing (Ryutaro Shimane, Shinya Kumagai and Minoru Sasaki et.al, “Localized plasma irradiation through a micronozzle for individual cell treatment "Japanese Journal of Applied Physics.,vol.3,2014,pp.1-5)

[0004] Although the above plasma processing methods can achieve maskless processing to a certain extent, they still have poor uniformity of reactive plasma, processing resolution cannot be further improved to submicron and nanometer levels, and high-efficiency parallel scanning processing cannot be realized. question

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