Aluminum nitride multilayer-ceramic leadless platy carrier packaging shell

Abstract

The invention discloses an aluminum nitride multilayer-ceramic leadless platy carrier packaging shell and relates to the technical field of electronic packaging. The aluminum nitride multilayer-ceramic leadless platy carrier packaging shell comprises a ceramic shell, the peripheral outer wall of the ceramic shell is provided with a metal conduction channel, the ceramic shell is made with aluminum nitride, the ceramic shell includes an upper cavity which opens up in the front and a lower cavity which opens down in the back, a base plate is disposed between the upper cavity and the lower cavity, both the lower surface and upper surface of the base plate are provided with bonding areas to bond chips or passive devices, the periphery of the bonding areas is provided with a lead bonding area, the lead bonding areas can be connected with the chips bonded to the bonding areas through bonding wires, and the lead bonding areas are connected with the metal conduction channel; the periphery of the lead bonding area is provided with a sealing area, a leading-out end pad is arranged at the periphery of the sealing area on the lower surface of the ceramic shell, and the leading-out end pad is communicated with the metal conduction channel. The aluminum nitride multilayer-ceramic leadless platy carrier packaging shell is effective in improving heat-radiating efficiency for a device, reducing junction temperature, improving reliability of the device and prolonging service life of the device.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to an aluminum nitride multilayer ceramic leadless chip carrier packaging shell. Background technique [0002] With the rapid development of electronic machines and electronic components in the direction of miniaturization, light weight, high speed, high efficiency, high integration, high reliability and high power output, the heat generated per unit volume of the device has increased sharply, which is harmful to the basic The heat dissipation of chips and packaging materials puts forward higher requirements. If the heat cannot be dissipated by the substrate in time, the device will be difficult to work normally, and even burn out in severe cases. [0003] Domestic high-density and high-power packages mainly use alumina ceramic materials, metal materials, alumina ceramics + high thermal conductivity materials (tungsten copper, molybdenum copper and CPC, etc.), LTCC sub...

AI Technical Summary

Problems solved by technology

Al 2 o 3 The thermal conductivity of silicon is low, and the thermal expansion coefficient does not match silicon; although the metal material has a high thermal conductivity, it is difficult to meet the packaging requirements of high-power devices due to the high thermal expansion coefficient mismatch with the chip substrate, and the use of metal materials The integration of the shell is low; alumina ceramics + high thermal conductivity materials (tungsten copper, molybdenum copper and CPC, etc.) have high thermal conductivity, but in order to make it have high mechanical properties, it is necessary to ensure that the shell and The high thermal conductivity material has a certain welding lap size in order to achieve the reliability of the welding between the shell and the high thermal conductivity material, which limits its size miniaturization, and the integration of the shell with high thermal conductivity material is low, so this mode It is difficult to realize the miniaturization and integration of the tube shell; the combination of LTCC substrate and alumina ceramic or metal material can solve the problem of thermal expansion coefficient mismatch, but the thermal conductivity is only 30W / m.K, and the thermal conductivity is weak, so thermal holes are needed Or open-cavity welding tungsten-copper heat sink, the strength after combination is low, and the reliability is poor. In order to increase the strength, a metal base plate needs to be welded, which can only be assembled with low-temperature solder, and the assembly ability is poor. Compared with other materials, AlN has excellent comprehensive performance and is new. An ideal substrate and packaging material for a generation of highly integrated and power devices

Images