Structure and method for reducing in-band noise in multistage power amplifier for mobile communication
A power amplifier and mobile communication technology, which is applied in the direction of improving the amplifier to reduce the impact of noise, etc., to achieve the effects of fast heat dissipation, thermal noise reduction, and reduction of in-band noise
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[0019] A preferred embodiment of the present invention, such as Figure 1 to Figure 4 Shown, a structure that reduces the in-band noise in the mobile communication multistage power amplifier. figure 1 Shown is a flip-chip front-end module chip (FlipChipFrontEndModule) with the top layer of plastic packaging material removed as a test object for this test. The front-end module chip (chip) includes three chips (die): a power amplifier chip (die) using gallium arsenide material and heterojunction bipolar transistor (HBT) process, and a power amplifier chip (die) using silicon material and complementary metal oxide semiconductor (CMOS) process controller die (die) and a switcher die (die) using gallium arsenide material, high electron mobility transistor (pHEMT) process. The front-end module chip is soldered on a test board, and the power supply voltage of 3.4V and 4.2V is used to test the chip under the condition of power saturation and 100% duty cycle. Connect a temperature se...
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