Graphene material based on solid state mechanochemical reactor and preparation method of graphene material

Abstract

The invention belongs to the technical field of graphene preparation, and in particular relates to a graphene material based on a solid state mechanochemical reactor and a preparation method of the graphene material. According to the technical scheme of the invention, a three-dimensional strong shearing structure of the solid state mechanochemical reactor is utilized, a grinding aid is introduced in the graphite grinding process, the grinding aid and the graphite can be subjected to intense mutual friction caused by three-dimensional shearing force initialized by the three-dimensional shearing structure, then graphite can be peeled, and thus single-layer or small-layer graphene can be prepared. The preparation method comprises the following steps of: respectively drying graphite and the grinding aid, adding into a mixing machine, uniformly mixing, transferring into the solid state mechanochemical reactor for grinding, removing the grinding aid and impurity ions, and drying at 60-90 DEG C, thereby obtaining the high-performance graphene material of which the layer number is smaller than 8 and substrate defects are slightly caused. The novel preparation method of the graphene material provided by the invention has the characteristics of simplicity, high efficiency, cleanliness and low cost, the prepared graphene material has small substrate defects, and surface functionalization of graphene can be achieved at one step.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and in particular relates to a graphene material based on a solid-phase mechanochemical reactor and a preparation method thereof. Background technique [0002] Graphene, as an emerging 2D carbon material, has become a research frontier in the fields of new energy materials, photocatalytic materials, and biological materials due to its unique chemical structure, large specific surface area, and excellent electrical, mechanical, and thermal properties. hotspot. Graphene has single-layer and few-layer. Single-layer graphene refers to a two-dimensional carbon material composed of a layer of carbon atoms closely packed periodically in a benzene ring structure (ie, hexagonal honeycomb structure). Few-layer graphene refers to the stacking of 3-10 layers of carbon atomic layers that are periodically densely packed in a benzene ring structure (ie, hexagonal honeycomb structure) in different ...

AI Technical Summary

Problems solved by technology

The preparation process is simple, the obtained graphene is of high quality, can grow in a large area, and is easier to transfer to various substrates. This method is now widely used in the preparation of graphene transistors and transparent conductive films, and has gradually become a high-quality material for the preparation of high-quality graphene. An important method for high-quality graphene, but the conditions for its preparation are extremely harsh, the equipment used is a high-temperature tube furnace, and the cost is extremely high, making it impossible to achieve large-scale production

[0008] At present, the patents on graphene production are mainly for the improvement of the chemical redox method, which still cannot fundamentally solve the problem of redox reaction. For example, the Chinese patent "Preparation of High-quality Graphene with Controllable Layer Method "(CN103342358A) uses the Hummers method to prepare graphene by regulating the degree of oxidation and dissociation of graphene. In this method, a mixed gas of hydrogen and argon is used to reduce graphene oxide at 300-1000 ° C. There is a reduction time Long time, high requirements for equipment, dangerous reaction and high cost

[0009] Since the quality, output and application of graphene are closely related to the preparation method of graphene, the current production technology cannot balance mass production and high performance

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