Reading-out amplifier and MRAM (Magnetic Random Access Memory) chip

Abstract

The invention provides a reading-out amplifier. The reading-out amplifier comprises an input part and a differential current output part, wherein the input part and the differential current output part are connected at a first input end V_in and a second input end V_in_n of the input part; the first input end V_in is used for inputting current passing through a storage unit; the second input end V_in_n is used for inputting current passing through a reference unit; the differential current output part is used for comparing two currents input by the input part and outputting a comparing result. The invention further provides an MRAM (Magnetic Random Access Memory) chip. According to the reading-out amplifier and the MRAM chip, provided by the invention, the resistance is optimal, so that the reading-out speed is rapider and reading-out operation saves more power; the distribution of reference resistance becomes narrow, the fault probability for judging a high-resistance state and a low-resistance state is reduced and the yield of the MRAM chip is improved; parameters are selected so that the resistance of a combined reference unit is mostly close to an optimal selection, and furthermore, the yield of the MRAM chip is improved.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to a sense amplifier and an MRAM chip. Background technique [0002] About MRAMs: [0003] The background of the present invention is the maturity of MRAM technology. MRAM is a new memory and storage technology that can be read and written as fast as SRAM / DRAM, and can permanently retain data after power failure like Flash memory. [0004] The economy of MRAM is quite good, and the area of ​​silicon chip occupied per unit capacity has a great advantage over SRAM, and also has advantages over NORFlash, which is often used in such chips, and has greater advantages than embedded NORFlash. The performance of MRAM is also quite good, the read and write delay is close to the best SRAM, and the power consumption is the best among various memory and storage technologies. Moreover, MRAM is not compatible with standard CMOS semiconductor processes like DRAM and Flash. MRAM can be integr...

AI Technical Summary

Problems solved by technology

This is the main factor that restricts the reading speed. Most of the time for reading memory data is spent charging this parasitic capacitance, and the time is about Δt=2C b R m , this design cannot break through this speed bottleneck

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