Method for measuring layer number of graphene on silicon carbide substrate

Abstract

The invention relates to a method for measuring the layer number of graphene on a silicon carbide substrate. The invention belongs to the technical field of spectral analysis. The method comprises 1, forming a graphene sample with a multilayer structure and a certain thickness on a silicon surface of silicon carbide through a thermal decomposition epitaxy method, 2, measuring the sample through an X ray photoelectron spectroscopy, 3, calculating C1s electron diffraction photon integrated intensity in a C-C bond at 284.5eV and C1s electron diffraction photon integrated intensity in a Si-C bond at 282.9eV through a scanned XPS energy spectrum, 4, substituting the diffraction photon integrated intensities into a function equation of the diffraction photon integrated intensity and graphene thickness and calculating sample graphene thickness and 5, comparing the graphene thickness and graphene atom interlayer space to obtain the layer number of the graphene sample. The method is fast, realizes accurate measurement, is free of peeling of graphene from a substrate, realizes lossless measurement and is convenient for device processing and performance test.

Description

technical field [0001] The invention belongs to the technical field of spectral analysis, in particular to a method for measuring the number of layers of graphene on a silicon carbide substrate. Background technique [0002] As a new type of nanomaterial, graphene has extremely superior properties in the fields of light, electricity and magnetism. Graphene and C 60 Like diamond, they are all allotropes of carbon, and carbon atoms are represented by sp 2 The hybridization method forms a bond to form a hexagonal structure similar to a honeycomb, and the hexagonal planes are stacked layer by layer to form a nanomaterial with a special energy band structure - graphene. [0003] At present, growing graphene on the surface of silicon carbide has become a relatively mature means of preparing graphene. Under certain conditions, the silicon atoms on the surface of silicon carbide are removed, and the remaining carbon atoms follow the principle of the lowest energy to self-assemble ...

AI Technical Summary

Problems solved by technology

However, traditional thin-film detection instruments such as step meters are difficult to accurately measure the thickness of nano-sized films; transmission electron microscopy is a relatively intuitive detection method, but the opacity of the silicon carbide substrate greatly limits the application of this technology; pull Mann spectroscopy and atomic force microscopy are more suitable for graphene obtained by mechanical exfoliation. If they are used to detect graphene on the surface of silicon carbide, they will often be affected by the signal of silicon carbide from the substrate.

Since the above-mentioned detection methods are not suitable for direct measurement of the number of graphene layers grown on the surface of silicon carbide, there are technical problems such as the inability to quickly, accurately and directly measure the number of graphene layers grown on the surface of silicon carbide

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