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Copper zinc tin sulfur thin film solar cell and preparation method thereof

A solar cell, copper-zinc-tin-sulfur technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as limiting application, reducing device performance, destroying p-n junction interface performance, etc., to improve electrical performance, improve absorption capacity, Environmentally friendly effects of raw materials

Active Publication Date: 2018-05-29
RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current solution deposition of ITO or AZO conductive window layer requires high temperature annealing at 300°C to 600°C, which limits its application in copper-zinc-tin-sulfur thin film solar cells
Because when the p-n junction of copper-zinc-tin-sulfur thin film solar cells is annealed above 250°C, the cadmium atoms in the buffer layer cadmium sulfide will diffuse, destroying the performance of the p-n junction interface, thereby reducing the performance of the device

Method used

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  • Copper zinc tin sulfur thin film solar cell and preparation method thereof
  • Copper zinc tin sulfur thin film solar cell and preparation method thereof
  • Copper zinc tin sulfur thin film solar cell and preparation method thereof

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preparation example Construction

[0082] The preparation method of the silver wire includes the following steps: dissolving silver salt, potassium bromide and polyvinylpyrrolidone (PVP for short) in an organic solvent, and reacting at 170° C. under inert gas protection conditions to prepare the silver wire.

[0083] Further, the silver wire is dissolved in an organic solvent with low boiling point and low carbon content to form a silver wire ink, which is coated on the aluminum-doped zinc oxide precursor film. The concentration of the dissolved silver wire in the organic solvent is 0.2-1.0 mL / g.

[0084] The organic solvent with a low boiling point and low carbon content is an organic solvent with 1 to 4 carbons and a low boiling point. The low carbon content is conducive to the fusion of silver wire and aluminum-doped zinc oxide, and the low boiling point is easy to volatilize and remove.

[0085] The silver line ink spin coating can also be tempered, the tempering temperature is 120-150°C, preferably 150°C, ...

Embodiment 1

[0092](1) The substrate ITO conductive glass 30×30 mm was ultrasonically cleaned with alkaline cleaning solution, acetone, isopropanol and high-purity deionized water for 15 minutes, blown dry with nitrogen, and then cleaned the surface of the substrate with ozone using a UV cleaning machine 10 minutes, then put it into a vacuum drying oven for subsequent use;

[0093] (2) Preparation of copper-zinc-tin-sulfur absorption layer: Weigh copper acetate, zinc acetate, tin chloride and thiourea, dissolve them in ethylene glycol methyl ether solvent, and react at 45°C for 30 minutes to obtain the copper-zinc-tin-sulfur precursor sol , the concentration ratio of metal ions in the copper-zinc-tin-sulfur precursor sol is Cu / (Zn+Sn)=0.8, Zn / Sn=1.2, and the method of spin coating deposition is used to deposit the copper-zinc-tin-sulfur precursor sol on the surface of ITO conductive glass , to obtain copper-zinc-tin-sulfur precursor films. Then sulfidation and tempering treatment at 350°C...

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Abstract

The invention provides a copper zinc tin sulfur thin film solar cell. The copper zinc tin sulfur thin film solar cell comprises an indium tin oxide conductive glass back electrode layer, a copper zinc tin sulfur thin film light absorption layer, a cadmium sulfide buffer layer and an aluminum-doped zinc oxide / silver wire / aluminum-doped zinc oxide composite transparent conductive window layer which are sequentially laminated, in the aluminum-doped zinc oxide / silver wire / aluminum-doped zinc oxide composite transparent conductive window layer, a layer of silver wire thin film is sandwiched between two layers of aluminum-doped zinc oxide thin films. In the copper zinc tin sulfur thin film solar cell, indium tin oxide conductive glass is adopted to substitute a Mo back electrode, and the thermal instability characteristics of the Mo back electrode and the copper zinc tin sulfur thin film during the vulcanization process are prevented; meanwhile, double-surface transmitting can be achieved, and the device efficiency of the copper zinc tin sulfur thin film solar cell is improved; moreover, the aluminum-doped zinc oxide / silver wire / aluminum-doped zinc oxide composite transparent conductive window layer prepared by a solution method is adopted to substitute an indium tin oxide / aluminum-doped zinc oxide (ITO / AZO) conductive window layer deposited by a vacuum method, the manufacturing cost of the copper zinc tin sulfur thin film solar cell is reduced, and the copper zinc tin sulfur thin film solar cell is very friendly to a surrounding environment.

Description

technical field [0001] The invention relates to a photovoltaic technology, in particular to a quaternary compound copper-zinc-tin-sulfur thin-film solar cell and a preparation method thereof. Background technique [0002] Copper-zinc-tin-sulfur (CZTS) film is rich in elements, environment-friendly, and has a light absorption coefficient as high as 10 4 cm -1 , has gradually become a research hotspot of solar cell materials. In addition, its optical bandgap is tunable (by doping selenium or germanium), and its crystal structure and electronic structure are similar to copper indium gallium selenide (recording efficiency 21.6%), making it promising as a high-efficiency and low-cost photovoltaic technology. Currently, various vacuum methods and solution methods are used to prepare CuZnSnS thin film solar cells. Based on vacuum thermal evaporation and magnetron sputtering technology, the recording efficiencies of copper-zinc-tin-sulfur thin film solar cells are 11.6% and 9.7% ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/18H01L31/0445
CPCH01L31/0326H01L31/1876Y02E10/50Y02P70/50
Inventor 檀满林刘荣跃王晓伟李冬霜符冬菊张维丽马清陈建军
Owner RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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