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Preparation method for high-purity high-compactness and large-dimension molybdenum-titanium alloy sputtering target material

A molybdenum-titanium alloy and sputtering target technology, which is applied in the field of material processing, can solve the problems of inability to prepare sputtering targets for large-scale flat-panel displays, size restrictions, and unsatisfactory product density, so as to improve the bad shape , Reduce grain size, good compactness effect

Active Publication Date: 2016-05-11
LUOYANG SIFON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of the invention is simple, and the sintered blank becomes a finished product directly after machining without subsequent hot rolling and heat treatment processes, so the density of the prepared product is not ideal
In addition, the size of the product is also limited by the sintering equipment, and it is impossible to prepare sputtering targets for large-scale flat-panel displays.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a high-purity, high-density, large-size molybdenum-titanium alloy sputtering target, comprising the following steps:

[0031] (1) Mixing materials: select molybdenum and titanium hydride as powder raw materials, mix molybdenum and titanium hydride in proportion, and ball mill in a planetary high-energy ball mill. The time is 24 hours, and then mixed evenly under the protection of argon in the three-dimensional mixer, wherein the atomic ratio of molybdenum and titanium in the alloy powder is 9:1;

[0032] (2) Compression molding: Put the mixed powder raw materials into a rubber sleeve mold for cold isostatic pressing. The cold isostatic pressing pressure is 200 MPa and the pressing time is 10 minutes to obtain a pressed blank;

[0033] (3) Sintering: The pressed blank is subjected to the first-stage dehydrogenation sintering and the second-stage densification sintering in a vacuum sintering furnace. -3 Pa, the sintering time is 6 hours, the second...

Embodiment 2

[0039] A method for preparing a high-purity, high-density, large-size molybdenum-titanium alloy sputtering target, comprising the following steps:

[0040](1) Mixing: choose molybdenum and titanium hydride as powder raw materials, mix molybdenum and titanium hydride in proportion, and ball mill in a planetary high-energy ball mill. The time is 36 hours, and then mixed evenly under the protection of argon in the three-dimensional mixer, wherein the atomic ratio of molybdenum and titanium in the alloy powder is 4:1;

[0041] (2) Compression molding: Put the mixed powder raw materials into the rubber sleeve mold for cold isostatic pressing. The cold isostatic pressing pressure is 100MPa and the pressing time is 4 minutes to obtain a pressed blank. Any side glue is required The gap between the inner wall of the sleeve and the powder material adjacent to it is not more than 1.5mm;

[0042] (3) Sintering: The pressed blank is subjected to the first-stage dehydrogenation sintering a...

Embodiment 3

[0048] A method for preparing a high-purity, high-density, large-size molybdenum-titanium alloy sputtering target, comprising the following steps:

[0049] (1) Mixing: choose molybdenum and titanium hydride as powder raw materials, mix molybdenum and titanium hydride in proportion, and ball mill in a planetary high-energy ball mill. The ball milling is carried out in argon protection. The ball-to-material ratio is 1.6:1. The time is 28 hours, and then mixed evenly under the protection of argon in the three-dimensional mixer, wherein the atomic ratio of molybdenum and titanium in the alloy powder is 6:1;

[0050] (2) Compression molding: Put the mixed powder materials into the rubber sleeve mold for cold isostatic pressing. The cold isostatic pressing pressure is 160MPa, and the pressing time is 8 minutes to obtain a pressed blank. Any side glue is required The gap between the inner wall of the sleeve and the powder material adjacent to it is not more than 1.5mm;

[0051] (3) ...

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Abstract

The invention discloses a preparation method for a high-purity high-compactness and large-dimension molybdenum-titanium alloy sputtering target material. The preparation method comprises the following steps that (1) material mixing is conducted, molybdenum and titanium hydride are selected as powder raw materials, the two kinds of powder are mixed under the argon protection atmosphere, and alloy powder is obtained; (2) compression molding is conducted, and the mixed powder raw materials are put into a rubber jacket mold to be subjected to cold isostatic pressing treatment; (3) sintering is conducted, a compressed blank is subjected to first-stage dehydrogenation sintering and second-stage compacting sintering in a vacuum sintering furnace, and finally the sintered blank is obtained; (4) rolling is conducted; (5) annealing is conducted; and (6) machining is conducted, the target material blank after being subjected to annealing is subjected to machining, and a molybdenum-titanium alloy sputtering target material product is obtained. The molybdenum-titanium alloy sputtering target material produced through the preparation method is uniform in content, free of segregation, fine and small in grain size, high in purity, and good in compactness.

Description

technical field [0001] The invention relates to the technical field of material processing, in particular to a method for preparing a high-purity, high-density, and large-size molybdenum-titanium alloy sputtering target. Background technique [0002] TFT-LCD (ThinFilmTransistor-LiquidCrystalDisplay) thin film field effect transistor liquid crystal display has the advantages of small size, light weight, low radiation, low power consumption, full color, etc., and is currently the leading product in the field of flat panel displays. [0003] In recent years, the wiring film of TFT has changed from Al to Cu with lower resistance, and when Cu of the main wiring film is in direct contact with amorphous Si, thermal diffusion will occur due to the heating process in TFT manufacturing, resulting in a change in the characteristics of TFT. Difference. Mo metal film has the advantages of heat resistance, corrosion resistance, low film resistance, etc., and can be used as a laminated wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22F3/16C22F1/18
CPCB22F3/16C22F1/18C23C14/3414
Inventor 孙虎民赵文普陈亚光高建杰
Owner LUOYANG SIFON ELECTRONICS
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