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Preparation method of black phosphorus and phosphorene

A technology of phosphorene and black phosphorus, which is applied in the field of material synthesis, can solve the problems of extremely high requirements for experimental instruments and equipment, and achieve the effect of cheap raw materials, simple process and good repeatability

Inactive Publication Date: 2020-05-08
NORTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the commonly used synthesis method is high temperature (1000°C) and high pressure (10kbar) method, but this method has extremely high requirements for experimental equipment.

Method used

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  • Preparation method of black phosphorus and phosphorene
  • Preparation method of black phosphorus and phosphorene
  • Preparation method of black phosphorus and phosphorene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Add 0.5g red phosphorus, 0.02g tin and 0.01g tin tetraiodide into the glass quartz tube, then vacuumize the quartz tube, when the vacuum degree reaches 10 -3 A certain amount of argon gas is charged at mbar, and a quartz tube (inner diameter 0.8 cm, length 8 cm) is packaged. Then set the following heating program in the muffle furnace:

[0028] Room temperature-320min-650℃-60min-650℃-450min-500℃-100min-500℃-330min-room temperature.

Embodiment 2

[0030] The target product that embodiment 1 obtains is added to 100ml of C 7 h 8 The solvent is heated in a water bath at 90°C for 2 hours, and then dried in a vacuum oven at 80°C to obtain high-purity black phosphorus.

Embodiment 3

[0032] Add 0.5g red phosphorus, 0.02g tin and 0.01g tin tetraiodide into the glass quartz tube, then vacuumize the quartz tube, when the vacuum degree reaches 10 -7 A certain amount of argon gas is charged at mbar, and a quartz tube (inner diameter 0.8 cm, length 8 cm) is packaged. Then set the following heating program in the muffle furnace: room temperature-320min-650°C-60min-650°C-450min-500°C-100min-500°C-330min-room temperature.

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Abstract

The invention relates to a method for preparing black phosphorus and phosphorene. The method for preparing black phosphorus includes reacting tin tetraiodide, tin and red phosphorus as raw materials to prepare black phosphorus. The involved preparation method of phosphorene includes treating the black phosphorus prepared in the present invention in N-methylpyrrolidone, absolute ethanol or N-cycloethylpyrrolidone for a reasonable period of time under the conditions of stirring, ultrasonic and 20-50°C. . The preparation method of the present invention adopts reasonable preparation raw materials and reaction conditions, and the synthesis time only requires 21-32 hours. Few-layer black phosphorus was successfully prepared using liquid phase exfoliation method. The preparation method has simple process, cheap raw materials and good repeatability.

Description

technical field [0001] The invention relates to the preparation and synthesis of materials, in particular to a method for preparing black phosphorus and phosphorene, and belongs to the field of material synthesis. Background technique [0002] Black phosphorus is an allotrope of phosphorus. It is a two-dimensional crystal formed by stacking a single layer of phosphorus atoms. It is similar to the structure of graphite, and the layers are combined by van der Waals force. Black phosphorus has high electron mobility (~1000cm 2 / Vs) and switching ratio (10 5 ), has excellent mechanical, thermal, electrical, optical properties and broad application prospects. The biggest difference from graphene is that black phosphorus is a direct bandgap semiconductor, which makes its optical and optoelectronic properties have huge advantages compared with other materials (including silicon and molybdenum sulfide), which makes black phosphorus a future optoelectronic device (such as photodet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B25/02
CPCC01B25/02C01P2002/72C01P2002/82C01P2002/85C01P2004/03C01P2004/04
Inventor 胡晓云穆江龙张国伟樊君苗慧浦晨晨韩同信刘恩周张德恺
Owner NORTHWEST UNIV
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