Tree-shaped rubrene crystal thin film preparation method adopting high boiling point solvent to carry out regulation and control

A high-boiling-point solvent and thin-film preparation technology, which is applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve the problems of poor film quality, complicated process, and high cost, and achieve the effect of improving high cost

Inactive Publication Date: 2016-05-04
CHANGCHUN UNIV OF TECH
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Problems solved by technology

[0005] The present invention is a preparation method of dendritic rubrene crystal thin film regulated by high boiling point solvent, aiming to improve the problems of high cost, complex process and poor film quality in the current rubrene thin film preparation process

Method used

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  • Tree-shaped rubrene crystal thin film preparation method adopting high boiling point solvent to carry out regulation and control
  • Tree-shaped rubrene crystal thin film preparation method adopting high boiling point solvent to carry out regulation and control

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Embodiment Construction

[0009] like figure 1 As shown, rubrene molecules grow into the final dendritic morphology.

[0010] The specific implementation process: the substrate is made of Si base and SiO with a surface thickness of 300nm 2 Insulation layer composition; the substrate is cleaned in the order of acetone, ethanol, and distilled water, and placed in an oven at 60°C for 20 minutes; for the configuration of rubrene solution 1, take rubrene 1mg, chloroform 0.5ml, DMF0. 3ml (hereinafter referred to as solution 1), with a volume ratio of 37.5%, was sequentially added to a 5ml reagent bottle, and then ultrasonically vibrated at room temperature with an ultrasonic intensity of 60% for 10 minutes; the substrate was taken out of the oven and placed On the model HP-127 digital display temperature precision electric heating plate, the temperature is set at 60°C; take 100μl-120μl solution from solution 1 and drop-coat it on the middle part of the substrate, rubrene molecules start from the dispersed s...

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Abstract

The invention relates to a tree-shaped rubrene crystal thin film preparation method adopting a high boiling point solvent to carry out regulation and control. Namely, growth of rubrene tree-shaped crystals is regulated and controlled by a DMF (Dimethyl Formamide) solvent, the DMF solvent with a volume ratio of 30 percent to 50 percent is added on the basis of an original chloroform solvent, a volatile speed is retarded by utilizing a solution dispensing method, the DMF solvent has a high boiling point, and the characteristic of further retarding the volatile speed enables rubrene molecules to have a sufficient driving force to sequentially complete the crystal growth process from a granular shape to a ribbon shape to a tree shape, thereby fulfilling the aim of regulating and controlling preparation of the tree-shaped rubrene crystals by the high boiling point solvent.

Description

technical field [0001] The invention relates to a method for preparing a dendritic rubrene crystal thin film regulated by a high boiling point solvent, and belongs to the technical field of organic optoelectronics. Background technique [0002] In recent years, due to the advantages of flexibility, cheapness and low cost, organic semiconductors have good application prospects in the fields of organic thin film transistors and organic solar cells. Rubrene (Rubrene, 5.6.11.12-tetraphenyltetraphenyl) is a fused-ring aromatic hydrocarbon composed of a naphthacene and four branched rings. It has high mobility and long exciton diffusion length, and can be applied To the fields of light-emitting diodes, field effect transistors, and solar cells, and the growth of rubrene crystal thin films is the basic condition for a wide range of applications. [0003] At present, the process technologies for preparing thin films include epitaxial film deposition technology, ion sputtering techn...

Claims

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Application Information

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IPC IPC(8): H01L51/44H01L51/46H01L51/48H01L51/52H01L51/54H01L51/56H01L51/10H01L51/30H01L51/40
CPCH10K85/00H10K10/46H10K10/80H10K30/00H10K30/80H10K50/80H10K71/00Y02E10/549
Inventor 王丽娟朱成孙丽晶谢强张玉婷
Owner CHANGCHUN UNIV OF TECH
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