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SiC-based diluted magnetic semiconductor thin film and preparation method thereof

A technology of dilute magnetic semiconductor and thin film, applied in the direction of magnetic thin film, magnetic object, magnetic material, etc., can solve the problem of weak dilute magnetic strength of SiC material, and achieve the effect of stable and effective method, good application value and strong saturation magnetization

Active Publication Date: 2016-05-04
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In recent years, based on SiC-based dilute magnetic semiconductor materials, the dilute magnetic properties of SiC materials are mainly studied by doping impurity particles, especially transition metal particles. For example, CN101404198A discloses implanting Fe ions into 4H-SiC substrates to prepare SiC dilute Magnetic semiconductor materials, the dilute magnetic strength of SiC materials obtained by this method is weak

Method used

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  • SiC-based diluted magnetic semiconductor thin film and preparation method thereof
  • SiC-based diluted magnetic semiconductor thin film and preparation method thereof
  • SiC-based diluted magnetic semiconductor thin film and preparation method thereof

Examples

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Effect test

Embodiment 1

[0045] (1) Put the silicon substrate into a mixed solution of ammonia water: hydrogen peroxide: deionized water = 1:1:5 to clean for 15 minutes, and then rinse with deionized water for 10 minutes; (2) Put the silicon substrate into hydrochloric acid: hydrogen peroxide: Wash in the mixed solution of deionized water=1:1:5 for 15min, then rinse with deionized water for 10min; (3) wash the silicon substrate with high-purity N 2 Blow dry; (4) Put the silicon substrate, graphite plate, and quartz boat into the quartz cavity; (5) Pump the quartz cavity to a background vacuum of ≤5.0×10 -4 Pa, rush into 2slm hydrogen to normal pressure; (6) turn on the intermediate frequency radio frequency power supply, pass into H 2 :HCl=1:0.5% mixed gas at 1020°C for 5 minutes; (7) After the etching is completed, cut into H 2 :C 3 h 8 =1:0.045% mixed gas at 1200°C for 10 minutes; (8) After carbonization is completed, the temperature is directly raised to 1350°C, and HCl:SiH4=1:0.08%, C / Si=3.2 ga...

Embodiment 2

[0047] (1) Put the silicon substrate into a mixed solution of ammonia water: hydrogen peroxide: deionized water = 1:1:5 to clean for 15 minutes, and then rinse with deionized water for 10 minutes; (2) Put the silicon substrate into hydrochloric acid: hydrogen peroxide: Wash in the mixed solution of deionized water=1:1:5 for 15min, then rinse with deionized water for 10min; (3) wash the silicon substrate with high-purity N 2 Blow dry; (4) Put the silicon substrate, graphite plate, and quartz boat into the quartz cavity; (5) Pump the quartz cavity to a background vacuum of ≤5.0×10 -4 Pa, rush into 2slm hydrogen to normal pressure; (6) turn on the intermediate frequency radio frequency power supply, pass into H 2 :HCl=1:0.5% mixed gas at 1020°C for 5 minutes; (7) After the etching is completed, cut into H 2 :C 3 h 8 =1:0.045% mixed gas at 1200°C for 10 minutes; (8) After carbonization is completed, the temperature is directly raised to 1350°C, and HCl:SiH4=1:0.08%, C / Si=3.2 ga...

Embodiment 3

[0049] (1) Put the silicon substrate into a mixed solution of ammonia water: hydrogen peroxide: deionized water = 1:1:5 to clean for 15 minutes, and then rinse with deionized water for 10 minutes; (2) Put the silicon substrate into hydrochloric acid: hydrogen peroxide: Wash in the mixed solution of deionized water=1:1:5 for 15min, then rinse with deionized water for 10min; (3) wash the silicon substrate with high-purity N 2 Blow dry; (4) Put the silicon substrate, graphite plate, and quartz boat into the quartz cavity; (5) Pump the quartz cavity to a background vacuum of ≤5.0×10 -4 Pa, rush into 2slm hydrogen to normal pressure; (6) turn on the intermediate frequency radio frequency power supply, pass into H 2 :HCl=1:0.5% mixed gas at 1020°C for 5 minutes; (7) After the etching is completed, cut into H 2 :C 3 h 8 =1:0.045% mixed gas at 1200°C for 10 minutes; (8) After carbonization is completed, the temperature is directly raised to 1350°C, and HCl:SiH4=1:0.08%, C / Si=3.2 ga...

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PUM

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Abstract

The invention relates to a SiC-based diluted magnetic semiconductor thin film and a preparation method thereof. The method comprises the following step of irradiating a SiC thin film material with a certain dosage of carbon particles <12>C<+>, thereby preparing the SiC-based diluted magnetic semiconductor thin film. The SiC thin film after being processed according to the method has obvious room-temperature ferromagnetism, is relatively high in saturation magnetization, and has favorable potential application value. The method is stable and effective, and the SiC-based diluted magnetic semiconductor thin film material can be prepared on the premise of no damage to the material.

Description

technical field [0001] The invention relates to a SiC-based dilute magnetic semiconductor thin film and a preparation method thereof, belonging to the field of novel semiconductor spin electronics. Background technique [0002] A spintronic device is a brand-new electronic device. Compared with traditional semiconductor electronic devices, it can simultaneously utilize the charge and spin properties of electrons, so it has fast speed, small size, low energy consumption and heat generation, and non-volatility. advantage. Diluted magnetic semiconductors are ideal materials for preparing spintronic devices. Based on dilute magnetic semiconductor materials, a series of spintronic devices such as spin field effect transistors and spin light-emitting diodes have been designed. [0003] SiC is the third generation wide bandgap semiconductor material, which has excellent physical and chemical properties such as large bandgap, high saturation electron mobility, and high thermal cond...

Claims

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Application Information

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IPC IPC(8): H01F41/22H01F1/40H01F10/193C23C16/32C23C16/56
CPCC23C16/325C23C16/56H01F1/401H01F10/193H01F41/22
Inventor 周仁伟刘学超郑燕青施尔畏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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