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Method for smelting preparation of high-quality boron carbide crystals

A boron carbide and crystal ingot technology, applied in the field of boron carbide raw material production and preparation, can solve the problems of large volatilization loss of boric acid, low temperature of electric arc furnace, easy imbalance of ingredients, etc., so as to increase mutual contact area, improve quality and compactness, The effect of reducing fugitive dust loss

Active Publication Date: 2016-04-20
NORTHEASTERN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] In the above two inventions, due to the characteristics of the powder directly entering the furnace and the open arc smelting of the electric arc furnace, this has caused the following disadvantages: (1) due to the large volatilization loss of boric acid, the proportioning ratio of boric acid and carbon is easily out of balance, difficult to Accurate control; (2) Due to the characteristics of the open arc smelting of the electric arc furnace, the loss of boric acid volatilization is large, the temperature in the electric arc furnace is low and it is difficult to keep warm, and the temperature difference between different furnace areas in the electric arc furnace is large, so the boron carbide impurities produced High, low hardness, low density, poor quality, the output rate of high-quality boron carbide that can be used for sapphire grinding is low (20-40%); (3) The energy consumption of boron carbide smelting is high, and the environmental pollution is serious

Method used

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  • Method for smelting preparation of high-quality boron carbide crystals

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Experimental program
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Effect test

Embodiment 1

[0033] 1. Grind petroleum coke, calcined coke, graphite, calcium chloride and potassium chloride respectively into powders with a particle size of ≤3mm;

[0034] 2. The raw materials are mixed according to the following weight percentages: 60% boric acid, 25% petroleum coke, 5% graphite, 5% calcined coke, 2% calcium chloride and 3% potassium chloride;

[0035] 3. Add an appropriate amount of water to the mixture and put it on a high-pressure ball press to press it into a briquette with a diameter of 25-30mm, and the pressing pressure is 8MPa;

[0036] 4. Dry the pressed agglomerates at a temperature of 50°C and a drying time of 24 hours;

[0037] 5. Put the agglomerate into the rotary submerged arc furnace for high-temperature smelting, the rotation speed of the submerged arc furnace body is 15 degrees / h, the smelting temperature is 1600-2000 °C, and the smelting time is 24 hours, and smelted into large boron carbide crystals;

[0038] 6. Break the boron carbide crystal block...

Embodiment 2

[0055] 1. Grind petroleum coke, calcined coke, graphite, carbon black and sodium chloride respectively into powders with a particle size of ≤2mm;

[0056] 2. The raw materials are mixed according to the following weight percentages: 70% boric acid, 8% petroleum coke, 8% graphite, 10% calcined coke, 2% carbon black and 2% sodium chloride;

[0057] 3. Add appropriate amount of water to the mixture and place it on a high-pressure ball press to form 40-50mm briquettes with a pressing pressure of 50MPa;

[0058] 4. Dry the pressed agglomerates at a temperature of 500°C and a drying time of 2 hours;

[0059] 5. Put the agglomerate into the rotating submerged arc furnace for high temperature smelting, the rotation speed of the submerged arc furnace body is 60 degrees / h, the smelting temperature is controlled at 1800 ℃ ~ 2300 ℃, the smelting time is 48 hours, and the smelted boron carbide crystal is large piece;

[0060] 6. Break the boron carbide crystal block into small pieces of ...

Embodiment 3

[0063] 1. Grind petroleum coke, graphite, carbon black and calcium chloride into powders with a particle size of ≤0.5mm;

[0064] 2. The raw materials are mixed according to the following weight percentages: 65% boric acid, 5% petroleum coke, 25% graphite, 4.5% carbon black and 0.5% calcium chloride;

[0065] 3. Add appropriate amount of water to the mixture, and then place it on a high-pressure ball press to form 30-35mm briquettes, with a pressing pressure of 30MPa;

[0066] 4. Dry the pressed agglomerates at a temperature of 200°C and a drying time of 18 hours;

[0067] 5. Put the agglomerate into the rotary submerged arc furnace for high-temperature smelting, the rotation speed of the submerged arc furnace body is 30 degrees / h, the smelting temperature is 1900 ° C ~ 2400 ° C, the smelting time is 72 hours, and smelted into large boron carbide crystals;

[0068] 6. Break the boron carbide crystal block into small pieces of 20-80mm, and then classify; process the second-gra...

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Abstract

The invention discloses a method for smelting preparation of high-quality boron carbide crystals to overcome the defects of the current boron carbide smelting technique and current products and meet the requirement of the sapphire industry for high-quality boron carbide. The method comprises the steps of breaking a carbonaceous reducing agent and a catalyst into powder independently; taking boric acid powder, carbonaceous reducing agent powder and catalyst powder according to the weight ratio, adding a proper amount of water for blending, conducting stirring, and then pressing the mixture on a high-pressure ball presser into lumps; drying the pressed lumps, and placing the dried lumps in a submerged arc furnace to be smelted, so that large boron carbide crystals are prepared; breaking the large boron carbide crystals into small pieces, and then conducting classification, so that the high-quality boron carbide crystals are obtained. The raw material utilization rate is high, production cost is low, energy is saved, the raw material volatilization rate is low, dust pollution is reduced greatly, the produced boron carbide has high purity, hardness and density, the high-quality boron carbide yield is high, and the requirement for sapphire grinding can be totally met.

Description

technical field [0001] The invention belongs to the field of production and preparation of boron carbide raw materials, in particular to a method for smelting and preparing high-quality boron carbide crystal blocks. Background technique [0002] Sapphire is an aluminum oxide (α-Al 2 o 3 ) single crystal, has excellent characteristics such as high hardness, good wear resistance, excellent mechanical properties, optical properties and chemical stability, and has been widely used in infrared military devices, satellite space technology and high-intensity laser window materials. In recent years, sapphire has been widely used as the most ideal substrate material for LEDs, and it has gradually been used in high-end mobile phone fields, such as mobile phone screens, touch keys and lenses. [0003] However, no matter whether sapphire is used in the field of LED or mobile phone, it is necessary to first cut the sapphire crystal into a wafer with a thickness of about 800 μm, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
CPCC01P2006/80Y02P20/10
Inventor 邢鹏飞李欣王帅都兴红高帅波李盼
Owner NORTHEASTERN UNIV
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