Semiconductor device and manufacturing method thereof and electronic device

A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as storage data loss, and achieve the effect of improving the coupling rate of devices

Active Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Random access memory, such as DRAM and SRAM (static random access memory), has the problem of data loss after power failure during use

Method used

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  • Semiconductor device and manufacturing method thereof and electronic device
  • Semiconductor device and manufacturing method thereof and electronic device
  • Semiconductor device and manufacturing method thereof and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The following will combine Figures 1A-1G Describe in detail the manufacturing method of the embedded flash memory of the present invention, Figures 1A-1G It is a cross-sectional view of the structure of the memory in the process of fabricating the embedded flash memory according to an embodiment of the present invention.

[0034] Such as Figure 1A As shown, a semiconductor substrate 100 is provided in which a well is formed.

[0035] The semiconductor substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-on-insulator Silicon germanium (SiGeOI) and germanium on insulator (GeOI), etc. As an example, in this embodiment, single crystal silicon is selected as the constituent material of the semiconductor substrate.

[0036] The semiconductor substrate 100 includes three regions, namely: a first region for forming a logic circuit gate structure, ...

Embodiment 2

[0082] The manufacturing method according to the present invention also provides a semiconductor device, which includes a floating gate with a bowl-shaped structure.

[0083] Exemplarily, the critical dimension of the top of the floating gate is larger than the critical dimension of the top of the active region.

[0084] Exemplarily, the thickness of the floating gate is 200 angstroms to 1000 angstroms.

[0085] Exemplarily, the floating gate extends to the active region.

Embodiment 3

[0087] An embodiment of the present invention provides an electronic device, which includes a semiconductor device. Wherein, the semiconductor device is the semiconductor device described in Embodiment 2, or the semiconductor device manufactured according to the method for manufacturing a semiconductor device described in Embodiment 1.

[0088] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device 200 . The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

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PUM

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof and an electronic device. The method comprises the following steps: forming a first hard mask layer, a second hard mask layer, a sacrificial layer and a third hard mask layer on a semiconductor substrate in sequence; carrying out etching process to form shallow trenches; filling isolation material layers in the shallow trenches; carrying out back etching to remove the sacrificial layer; removing the second hard mask layer; removing the first hard mask layer; forming a tunneling oxide layer on the exposed semiconductor substrate; forming a floating gate material layer on the semiconductor substrate; and carrying out planarization process. The manufacturing method provides a good process window for the formation of a shallow trench isolation structure oxide layer and floating gate polycrystalline silicon; contour of a floating gate is controlled well; and the physical contour of the floating gate helps to improve coupling efficiency of the device.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have resulted in more and more high-density various type memory. [0003] Random access memory, such as DRAM and SRAM (static random access memory), has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. Recently, flash memory based on floating gate concept has become the most general non-volatile memory due to its small cell size and good performance. [0004] Flash memory is FLASH, which has become the mainstream of non-volatile semiconductor s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/8247H10B41/35H10B69/00
Inventor 王新鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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