Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Monitoring reference mark forming method, monitoring reference mark and three-dimensional memory

A memory and marking technology, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem that the critical size is difficult to monitor accurately, and achieve good control effect

Active Publication Date: 2020-08-25
YANGTZE MEMORY TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the three-dimensional memory process, the effective storage area of ​​the stepped structure is on the order of millimeters, but after photolithography and etching processes, the critical dimension of the effective storage area of ​​the stepped structure will be reduced by several hundred nanometers. Setting monitoring reference marks to monitor the critical dimensions of the effective storage area of ​​the ladder structure, but it is still difficult to accurately monitor the critical dimensions of the nanometer scale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monitoring reference mark forming method, monitoring reference mark and three-dimensional memory
  • Monitoring reference mark forming method, monitoring reference mark and three-dimensional memory
  • Monitoring reference mark forming method, monitoring reference mark and three-dimensional memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the purpose, technical solution and advantages of the application more clear, the technical solution of the application will be further elaborated below in conjunction with the accompanying drawings and embodiments. The described embodiments should not be considered as limiting the application. All other embodiments obtained under the premise of no creative work belong to the scope of protection of this application.

[0028] In the following description, references to "some embodiments" describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or a different subset of all possible embodiments, and Can be combined with each other without conflict.

[0029] If there is a similar description of "first / second" in the application documents, add the following explanation. In the following description, the terms "first\second\third" are only used to distinguish similar objects and do not mean Regarding ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a monitoring reference mark forming method, a monitoring reference mark and a three-dimensional memory, and the method is applied to a forming process of thethree-dimensional memory and comprises the steps: providing a semi-finished semiconductor which comprises a substrate and a laminated structure deposited on the substrate; forming a monitoring reference mark at a specific position of the top of the laminated structure through a forming process of a top selection gate trench of the three-dimensional memory, wherein the monitoring reference mark isembedded in the top of the laminated structure; and etching the top of the laminated structure containing the monitoring reference mark through a forming process of the stepped structure of the three-dimensional memory, so that the monitoring reference mark protrudes out of the top of the laminated structure.

Description

technical field [0001] The embodiments of the present application relate to but are not limited to the field of semiconductors, and in particular relate to a method for forming a monitoring reference mark, a monitoring reference mark, and a three-dimensional memory. Background technique [0002] In the three-dimensional memory process, the effective storage area of ​​the stepped structure is on the order of millimeters, but after photolithography and etching processes, the critical dimension of the effective storage area of ​​the stepped structure will be reduced by several hundred nanometers. Setting monitoring reference marks to monitor the critical dimension of the effective storage area of ​​the ladder structure, but it is still difficult to accurately monitor the critical dimension of the nanometer scale. Since the size of the contact point of the ladder structure is nanoscale and needs to be formed based on an accurate ladder structure, the change of the critical dimen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L27/11551H01L27/11578H10B41/20H10B43/20
CPCH01L23/544H10B41/20H10B43/20
Inventor 周玉婷张磊汤召辉曾凡清汪鑫
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com