Semiconductor structure and forming method thereof
A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problems of reduced operating speed of semiconductor devices, large contact resistance, and large influence on the performance of MOS transistors, and achieve the effect of reducing the Schottky barrier.
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[0030] As mentioned in the background art, the contact resistance of the transistor formed in the prior art needs to be further reduced. Since the contact resistance between the source and drain of the transistor and the metal plug accounts for the main part of the contact resistance of the transistor, it can be further reduced by The contact resistance between the source drain and the metal plug is used to reduce the contact resistance of the transistor.
[0031] Studies have found that when the metal silicide layer is directly formed on the surface of the source and drain, due to the low resistance of the metal silicide layer and the small work function difference with the source and drain, the metal silicide layer and the source and drain There is a lower Schottky barrier between them, so that the contact resistance between the metal silicide layer and the source and drain can be reduced. However, in actual devices, the surface of the source and drain has many defects, such...
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