Packaging member for reducing width of lead wire by using grinding technology and manufacture process thereof

Abstract

The invention discloses a packaging member for reducing the width of a lead wire by using grinding technology and a manufacture process thereof. The packaging member is mainly composed of a chip, a soldering wire, a die boning adhesive, a upper plastic packaging body, an inner lead wire, pins, grinded plastic packaging body, and solder balls. The chip is connected with the inner lead wire via the die boning adhesive. The soldering wire communicates the chip with the inner lead wire. The gaps between lower parts of the inner lead wires are filled with the grinded plastic packaging body. The lower end portion of the inner lead wire is provided with the pins. The pins are connected with solder balls. The upper plastic packaging body surrounds the chip, the soldering wire, the die boning adhesive, and the inner lead wire. The manufacture process comprises steps of: half etching the back of a framework; pre-plastic packaging the back of the framework; grinding the back of the framework; grinding and electrochemical polishing the front of the framework; locally electroplating the framework and etching the front of the framework; installing the chip and performing pressure welding; performing plastic packaging; and planting solder balls. The framework is grinded so that the layout density of the framework is greatly increased; layout flexibility is improved; packaging dimension is effectively decreased; and packaging cost is reduced.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a package that adopts a grinding process to reduce the width of lead wires and a manufacturing process thereof. Background technique [0002] At present, the manufacturing process of common packages has the following problems: [0003] 1. Ordinary semi-etched frames have low etching lead precision, which can only meet the general wiring density requirements, and it is difficult to achieve higher wiring density requirements. [0004] 2. Due to the low wiring density, some inner leads cannot be extended to the area closer to the chip due to the limitation of the etching process. The distance between the second soldering point and the chip is far away, and the shortening of the bonding wire length during pressure bonding is limited, and the cost reduction is limited. [0005] 3. For the etching frame, due to the requirement of frame thickness, the etching process is greatly affec...

AI Technical Summary

Problems solved by technology

[0003] 1. Ordinary semi-etched frames have low precision of etched leads, which can only meet the general wiring density requirements, and it is difficult to achieve higher wiring density requirements

[0004] 2. Due to the low wiring density, some inner leads cannot be extended to the area closer to the chip due to the limitation of the etching process. The distance between the second soldering point and the chip is far away, and the shortening of the bonding wire length during pressure bonding is limited, and the cost reduction is limited.

[0005] 3. For the etching frame, due to the thickness requirement of the frame, the etching process is greatly affected, and it is impossible to etch a very thin lead width. The wiring area is seriously wasted, and the layout of the inner leads is also affected, and the wiring flexibility is low.

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