Method for carrying out surface modification on polyether-ether-ketone material and modified polyether-ether-ketone material

A technology of polyether ether ketone and surface modification, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., to achieve the effect of improving osseointegration, simple and easy method, and promoting osteogenic differentiation

Inactive Publication Date: 2015-12-09
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the defects of the existing methods for surface modification of polyetheretherketone materials and improve the osseointegration of polyetheretherketone materials. Surface modification method and surface modified polyetheretherketone material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for carrying out surface modification on polyether-ether-ketone material and modified polyether-ether-ketone material
  • Method for carrying out surface modification on polyether-ether-ketone material and modified polyether-ether-ketone material
  • Method for carrying out surface modification on polyether-ether-ketone material and modified polyether-ether-ketone material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] After polishing, the 10mm×10mm×1mm polyether ether ketone is cleaned by ultrasonic cleaning with acetone and deionized water in sequence, each time for 30 minutes, after cleaning, it is dried in an oven at 80°C and stored properly. Using electron beam evaporation technology, calcium silicate is used as the evaporation target material, and polyetheretherketone material is subjected to electron beam evaporation. The specific process parameters are shown in Table 1, and the obtained sample number is EBE-2min;

[0037] Table 1 Electron beam evaporation parameters:

[0038] Electron beam excitation voltage (kV)

8.5

electron beam current

1.6A

Evaporation time(min)

2

Background vacuum (Pa)

5×10 -3

[0039] ;

[0040] The silicon content on the surface of the modified polyetheretherketone material was 4.0%.

Embodiment 2

[0042] After polishing, the 10mm×10mm×1mm polyetheretherketone is ultrasonically cleaned with acetone and deionized water, each time for 30 minutes, and then dried in an oven at 80°C and stored properly. Using electron beam evaporation technology, using calcium silicate as the evaporation target material, the polyetheretherketone material is subjected to electron beam evaporation. The specific process parameters are shown in Table 2, and the obtained sample number is EBE-5min;

[0043] Table 2 E-beam evaporation parameters:

[0044] Electron beam excitation voltage (kV)

8.5

electron beam current

1.6A

Evaporation time(min)

5

Background vacuum (Pa)

5×10 -3

[0045] ;

[0046] The silicon content on the surface of the modified polyetheretherketone material is 5.0%.

Embodiment 3

[0048] After polishing, the 10mm×10mm×1mm polyether ether ketone is cleaned by ultrasonic cleaning with acetone and deionized water in sequence, each time for 30 minutes, after cleaning, it is dried in an oven at 80°C and stored properly. Using electron beam evaporation technology, using calcium silicate as the evaporation target material, the polyether ether ketone material is subjected to electron beam evaporation. The specific process parameters are shown in Table 3, and the obtained sample number is EBE-8min;

[0049] Table 3 E-beam evaporation parameters:

[0050] Electron beam excitation voltage (kV)

8.5

electron beam current

1.6A

Evaporation time(min)

8

Background vacuum (Pa)

5×10 -3

[0051] ;

[0052] The silicon content on the surface of the modified polyetheretherketone material was 7.0%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for carrying out surface modification on a polyether-ether-ketone material and the modified polyether-ether-ketone material. Based on the electron beam evaporation technology, biological ceramic with silicon is adopted as an evaporation target, silicon is evaporated and deposited on the surface of the polyether-ether-ketone material, and a modified layer with silicon is obtained. Based on the electron beam evaporation technology, silicon is introduced into the surface of the polyether-ether-ketone material, the method is simple and feasible, the modification effect is excellent, the content of silicon is controllable, and the surface biocompatibility and frame integration of the polyether-ether-ketone material can be greatly improved.

Description

technical field [0001] The invention relates to a method for surface modification of polyetheretherketone materials, in particular to a method for surface modification of polyetheretherketone materials by electron beam evaporation technology, and the surface-modified polyetheretherketone prepared by the method. Ether ether ketone material. Background technique [0002] In recent years, the application prospects of medical polymer implant materials have become increasingly broad. The elastic modulus of medical polyether ether ketone material (PEEK) is the best match with human bone tissue, which can effectively reduce bone resorption and bone atrophy caused by stress shielding effect, and has outstanding fatigue resistance, which is expected to become the first choice to replace titanium and its alloy materials Hard tissue implant materials (Biomaterials 2007, 28:4845-4869.). However, although the PEEK material has good biocompatibility, its biological activity is poor, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/06C08L61/16C08K3/34C08K7/14
Inventor 刘宣勇陆涛孟凡浩
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap