GaN-Based Low Leakage Cantilever Beam Switch NOR Gate rs Flip-Flop

Abstract

The invention provides an RS trigger composed of GaN-based low-leakage-current cantilever beam switch MESFET NOR gates. The RS trigger comprises a first NOR gate (G1) and a second NOR gate (G2); the first NOR gate (G1) and the second NOR gate (G2) are composed of a first cantilever beam gate NMOS (N-Metal-Oxide-Semiconductor) transistor (1), a second cantilever beam gate NMOS transistor (2), a third cantilever beam gate NMOS transistor (3) and a fourth cantilever beam gate NMOS transistor (4); each cantilever beam gate NMOS transistor is composed of a gate electrode (8), a source electrode and a drain electrode; the source electrode and the drain electrode are formed by forming an ohmic contact by metal and a heavily doped N region; the gate electrode is formed by forming an Schottky contact by metal and a channel region; the four cantilever beam gate NMOS transistors of the RS trigger are manufactured on a gallium nitride substrate (13); one end of the cantilever beam switch (7) is fixed on an anchor zone (9), and the other end of the cantilever beam switch (7) is suspended on the gate electrode (8); when the voltage applied over the cantilever beam switch and a pull-down electrode is less than the threshold voltage of the MESFET, the cantilever beam switch cannot be pulled down, and no voltage exists on the gate electrode, so that the N type MESFET cannot be turned on.

Description

technical field [0001] The invention provides a gallium nitride-based low-leakage current cantilever switch MESFET (metal-semiconductor field effect transistor) NOR gate RS flip-flop, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the emergence of intelligent terminal equipment such as smart phones, a wave of rapid update of mobile terminal equipment has begun to appear. The manufacturing technology of mobile terminal equipment is one of the most important research directions in current industry and scientific research. Components, radio frequency integrated circuit chips are also developing rapidly, the scale of integration continues to expand, and the operating frequency continues to increase. Due to the increasing number of transistors in the chip, the power consumption of the integrated circuit follows, and the excessively high Power consumption will cause the chip to overheat, and the operating characteristics...

AI Technical Summary

Problems solved by technology

[0002] With the emergence of intelligent terminal equipment such as smart phones, a wave of rapid update of mobile terminal equipment has begun to appear. The manufacturing technology of mobile terminal equipment is one of the most important research directions in current industry and scientific research. Components, radio frequency integrated circuit chips are also developing rapidly, the scale of integration continues to expand, and the operating frequency continues to increase. Due to the increasing number of transistors in the chip, the power consumption of the integrated circuit follows, and the excessively high Power consumption will cause the chip to overheat, and the operating characteristics of the transistor will be affected by the temperature. Therefore, the overheated chip temperature will not only reduce the life of the chip, but also affect the stability of the chip. Silicon-based materials can no longer meet the requirements.

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