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Method for improving quality of diamond seed crystal with hydrogen plasma multiple etching/annealing cyclic process

A plasma, multiple etching technology, applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., can solve the problems of deterioration of the surface quality of the seed crystal, time-consuming, complicated operation, etc., to reduce epitaxial growth. Risk of loss of diamond quality, simplification of operations, effect of improved crystallinity

Active Publication Date: 2015-10-14
九桓碳构(威海)新材料有限公司
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  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problems that the existing method for improving the quality of diamond seed crystals takes a long time, the operation is relatively complicated, and it is easy to cause the surface quality of the seed crystal to deteriorate. Seed quality method

Method used

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  • Method for improving quality of diamond seed crystal with hydrogen plasma multiple etching/annealing cyclic process
  • Method for improving quality of diamond seed crystal with hydrogen plasma multiple etching/annealing cyclic process
  • Method for improving quality of diamond seed crystal with hydrogen plasma multiple etching/annealing cyclic process

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specific Embodiment approach 1

[0026] Specific implementation mode one: the method for improving the quality of diamond seed crystals by using hydrogen plasma multiple etching / annealing cycle process in this embodiment comprises the following steps:

[0027] 3. Diamond seed crystal cleaning: put the diamond seed crystal and metal molybdenum substrate disc into acetone, deionized water, and absolute ethanol in sequence for ultrasonic cleaning. Each cleaning time is 15-30 minutes, and the ultrasonic power is 100-300W. Obtain the cleaned seed crystal and molybdenum alloy substrate;

[0028] 4. Welding: welding the cleaned seed crystal to the cleaned molybdenum substrate wafer with gold foil;

[0029] 3. Place the seed crystal: place the welded seed crystal on the heat insulation wire to keep the surface of the seed crystal level;

[0030] 4. Hydrogen plasma etching / annealing:

[0031] (1) Put the seed crystal treated in step 3 into the cabin, and after closing the cabin, vacuumize the cabin body so that the ...

specific Embodiment approach 2

[0042]Embodiment 2: The difference between this embodiment and Embodiment 1 is that the ultrasonic power in Step 1 is 200W. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0043] Specific embodiment 3: The difference between this embodiment and specific embodiment 1 or 2 is that the cleaning time in step 1 is 20 minutes each time. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention relates to a method for improving the quality of diamond seed crystals with a hydrogen plasma multiple etching / annealing cyclic process, and relates to a method for improving diamond seed crystal quality. With prior arts, a method for improving diamond seed crystal quality has the defects of high time consumption and complicated operation. Seed crystal surface quality degradation can also be caused easily. The invention aims at solving the above problems. The method comprises the steps of 1, diamond seed crystal cleaning; 2, welding; 3, seed crystal placement; and 4, hydrogen plasma etching / annealing. With the hydrogen plasma etching / annealing treatment, crystal defect, surface and sub-surface damages on diamond seed crystal surfaces caused by mechanical polishing, and diamond seed crystal internal stress and defects can be removed at a same time in a same instrument; crystallinity can be improved, and high-quality seed crystals can be obtained; and the operation is greatly simplified, such that time and cost are saved. The method provided by the invention is applied in the technical field of crystal growth.

Description

technical field [0001] The invention relates to a method for improving the quality of diamond seed crystals. Background technique [0002] In recent years, large-size single crystal diamond and quasi-single crystal diamond have been used in precision machining, high High-tech fields such as frequency communication, aerospace and cutting-edge technology have gradually become the basic, key and even the only material solutions. After decades of development, the high-temperature and high-pressure method (HPHT) has made great progress, but it still has technical problems such as poor seed crystal repeatability, limited size, and high density of impurities and defects. [0003] In the preparation technology of CVD homoepitaxial growth single crystal diamond, microwave plasma chemical vapor deposition (MWCVD) has the advantages of electrodeless discharge, less impurity pollution in the system, high plasma density, continuous controllable microwave energy, and fast growth rate. ,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/04
Inventor 朱嘉琦陈亚男代兵舒国阳王强赵继文刘康
Owner 九桓碳构(威海)新材料有限公司
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