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Preparation method of textured structure of crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of unsatisfactory industrial production and low conversion efficiency of cells, and achieve the effects of reducing consumption, reducing waste liquid treatment costs, and simple processes

Active Publication Date: 2018-03-09
CSI CELLS CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] However, the conversion efficiency of the battery sheet prepared by the above preparation method is low, which cannot meet the needs of industrial production.

Method used

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  • Preparation method of textured structure of crystalline silicon solar cell
  • Preparation method of textured structure of crystalline silicon solar cell
  • Preparation method of textured structure of crystalline silicon solar cell

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Embodiment 1

[0038] see figure 1 Described, a kind of preparation method of the textured structure of polycrystalline silicon solar cell, is made up of following steps:

[0039] (1) Clean the silicon wafer and remove the surface damage layer;

[0040] (2) Put the above-mentioned silicon wafer into a chemical etching solution containing metal ions to form nanowires or porous silicon structures on the surface of the silicon wafer; the temperature is 30°C, and the time is 60s;

[0041] The metal ion is selected from silver ion;

[0042] The chemical etching solution is selected from HF and H 2 o 2 mixed solution;

[0043] Among them, the concentration of HF is 12 mol / L, H 2 o 2 The concentration is 0.4 mol / L;

[0044] (3) Putting the above-mentioned silicon chip into a chemical etching solution for corrective etching, so that the above-mentioned nanowire or porous silicon structure forms a nano-deep hole structure;

[0045] The chemical etching solution is HNO 3 Mixed solution with H...

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Abstract

The invention discloses a preparation method of the texturized surface structure of a crystalline silicon solar cell. The preparation method is characterized in that the preparation method includes the following steps that: (1) a silicon wafer is arranged in an oxidizing agent and metal salt-containing hydrofluoric acid solution, so that a nano-level texturized structure can be formed on the surface of the silicon wafer, corrosion temperature ranging from 8 to 80 DEG C, and treatment time ranging from 10 to 1000 seconds; and (2) a texturized surface microstructure corrective etching step is performed: the silicon wafer with the texturized structure is put in a chemical corrosion liquid so as to be subjected to microstructure corrective etching, and the chemical etching liquid is a mixture liquid of hydrofluoric acid and nitric acid. According to the novel preparation method of the texturized surface structure of the crystalline silicon solar cell provided by the invention, process parameters are optimized, and obvious advantages can be realized in the aspect of photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a method for preparing a textured surface structure of a crystalline silicon solar cell, belonging to the technical field of solar cells. Background technique [0002] With the wide application of solar cell components, photovoltaic power generation occupies an increasingly important proportion in new energy and has achieved rapid development. Among the current commercialized solar cell products, crystalline silicon (monocrystalline and polycrystalline) solar cells have the largest market share, maintaining a market share of more than 85%. [0003] At present, in the production process of solar cells, the textured structure on the surface of silicon wafers can effectively reduce the surface reflectance of solar cells, which is one of the important factors affecting the photoelectric conversion efficiency of solar cells. In order to obtain a good textured structure on the surface of crystalline silicon solar cells to achieve a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18B82Y40/00
CPCB82Y40/00H01L31/18Y02P70/50
Inventor 邹帅王栩生邢国强
Owner CSI CELLS CO LTD
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