Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Na doping method of CIGS (copper, indium, gallium and selenium) and manufacturing method of Na-doped CIGS sputtering target material

A doping amount and compound technology, applied in the field of solar cells, can solve the problems of Na loss, long doping time, uneven doping, etc.

Active Publication Date: 2015-09-23
江苏先能材料有限公司
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these doping methods have problems such as uneven doping of Na, long doping time, and easy loss of Na during the doping process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Na doping method of CIGS (copper, indium, gallium and selenium) and manufacturing method of Na-doped CIGS sputtering target material
  • Na doping method of CIGS (copper, indium, gallium and selenium) and manufacturing method of Na-doped CIGS sputtering target material
  • Na doping method of CIGS (copper, indium, gallium and selenium) and manufacturing method of Na-doped CIGS sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The present embodiment provides a kind of Na doping method of CIGS, it comprises the following steps:

[0040] Step 1, preparing a Na-containing solid solution of Ga.

[0041] First, according to the weight ratio Ga 92.2%, Na 2 SeO 3 7.8% weighed Ga and Na 2 SeO 3 . Then, Ga was placed in the container. In order to improve the quality of the final compound product of CIGS doped with Na, Ga, Na 2 SeO 3 Both adopt a purity of more than 99.99%, and the container adopts a quartz tube. Next, the container is heated to liquefy Ga. In this embodiment, the temperature of Ga in the container is 35°C, and then the Na 2 SeO 3 Added to the container to make liquid Ga and Na 2 SeO 3 mix. Preferably, Na 2 SeO 3 For powder, shake the container to make Ga liquid and Na 2 SeO 3 The solids were mixed well. Finally, heat the mixture in the container to above 35°C to make the sodium-containing compound Na 2 SeO 3 Dissolves in liquid Ga, preferably, making the mixture com...

Embodiment 2

[0048] This embodiment also provides a kind of doped 1at%Na prepared by using embodiment 1 2 SeO 3 CuIn 0.7 Ga 0.3 Se 2 Compound material to make sputtering target method. By doping Na 2 SeO 3 The introduced Se atoms can fill the holes in the crystal lattice or other crystal defects, such as dislocations or grain boundaries, in the crystal grains of CIGS, thereby reducing the loss of carriers during the photoelectric conversion process.

[0049] First, dope with 1at% Na 2 SeO 3 CuIn 0.7 Ga 0.3 Se 2 The compound is placed in a closed device filled with an inert gas, such as argon, and the closed device is placed on a planetary ball mill for pulverization to prepare a powder material with an average particle size of 75 μm. Preferably, the powder is sieved to make the particle size of the powder more uniform.

[0050] Secondly, the powder prepared above is dried to remove moisture adsorbed on the surface of the powder. Specifically, the powder can be baked in an oven...

Embodiment 3

[0056] The present embodiment provides a kind of Na doping method of CIGS, it comprises the following steps:

[0057] Step 1, preparing a Na-containing solid solution of Ga.

[0058] First, according to the weight ratio Ga 96.3%, Na 2 S 3.7% weigh Ga and Na 2 S then places Ga in the quartz tube, where Ga and Na 2 The purity of S is above 99.99%. Secondly, the Ga in the quartz tube is heated to liquefy, and then the Na 2 Add S powder into the container to make Ga liquid and Na 2 S mixed. Finally, heat the mixture in the container to above 35°C to make the sodium-containing compound Na 2 S is dissolved in liquid Ga; then cooled naturally, so that the temperature of the mixture in the container is below 20°C, and the liquid is cooled and solidified into a solid, thereby obtaining a Ga-containing Na-containing solid solution.

[0059] Step 2, mixing the obtained Ga-containing Na-containing solid solution with copper, indium and selenium according to the required ratios of C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a Na doping method of CIGS (copper, indium, gallium and selenium) and a manufacturing method of a Na-doped CIGS sputtering target material. The Na doping method of CIGS comprises the following steps of: preparing a sodium-containing solid solution of gallium; mixing the solid solution with copper, indium and selenium in a required proportion; and carrying out vacuum melting to obtain a Na-doped CIGS compound. The preparation method of the Na-doped CIGS sputtering target material comprises the following steps of: smashing the prepared Na-doped CIGS compound; carrying out hot-pressing treatment after drying treatment; cooling the smashed Na-doped CIGS compound to the room temperature after carrying out hot-pressing; and finally processing the smashed Na-doped CIGS compound into a required shape by a grinding machine so as to obtain the Na-doped CIGS sputtering target material. The method provided by the invention can be used for preparing the CIGS compound which is uniformly doped with Na. High-quality Na-doped CIGS sputtering target material can be prepared by utilizing the compound. Moreover, in the preparation process, the loss of various elements can be further avoided, so that the conversation efficiency of a solar battery is improved in a facilitated mode.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a Na doping method for CIGS and a method for making a sputtering target thereof. Background technique [0002] With the massive consumption of fossil energy and the aggravation of environmental problems, people all over the world hope to find a clean energy with large reserves. Solar energy emerges as the times require, and solar energy can be described as inexhaustible, efficient, and clean energy. The utilization of solar energy focuses on converting light energy into electrical energy for utilization. Solar cells mostly use silicon-based materials, which have high production costs. As a new generation of solar cell materials, copper indium gallium selenide (CIGS), which has a comparative advantage, has broad application prospects and markets. However, how to improve the photoelectricity of solar cells Conversion efficiency has become a key issue limiting the development ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B19/00C04B35/547C04B35/626C23C14/34C23C14/06
CPCY02P20/133
Inventor 李宗雨丘立安
Owner 江苏先能材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com