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A method of making a photomask

A manufacturing method and photomask technology, which are applied in optics, microlithography exposure equipment, photoengraving process of patterned surface, etc., can solve problems such as Cr residue, and achieve the advantages of avoiding Cr residue, improving removal rate, and improving strength. Effect

Active Publication Date: 2020-01-07
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for making a photomask, which is used to solve the problem of Cr residues in the prior art Cr removal process

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  • A method of making a photomask
  • A method of making a photomask
  • A method of making a photomask

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Embodiment Construction

[0036] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0037] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

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Abstract

The present invention provides a photomask production method, which comprises: providing a transparent substrate, wherein a phase shift layer having a mask pattern and a Cr layer are formed on the transparent substrate; coating a photoresist to cover the Cr layer in a spin coating manner, and removing the photoresist on the main map region Cr layer by using an exposing and developing technology; baking; carrying out primary etching on the main map region Cr layer by using a dry etching process; rinsing with a cleaning liquid; and carrying out secondary etching on the main map region Cr layer by using a dry etching process, and finally removing the photoresist. According to the photomask production method of the present invention, the baking is performed after the development, such that the strength of the photoresist can be improved, and the photoresist is not easily damaged during the subsequent cleaning liquid rinsing; the cleaning liquid rinsing step is added between the two etching steps, such that the byproduct produced due to the etching or the particles carried before the etching can be removed; and the Cr etching is changed into the two-step dry etching, such that the main map region Cr layer removal rate is improved, and the Cr residue is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a photomask. Background technique [0002] Photolithography is a particularly important step in semiconductor device processing. The essence of photolithography is to replicate the circuit structure on the wafer to be etched later. The circuit structure is first made in a certain proportion in the form of graphics on a transparent substrate called a photomask. The light source transfers the graphics to the photoresist of the wafer through the photomask. After development, the subsequent etching steps Imaging the pattern on the underlying film of the wafer. [0003] It can be seen that in the photolithography step, the light source copies the pattern to the photoresist layer of the wafer substrate through the photomask. Therefore, it is necessary to make patterns on the photomask. At present, there are mainly two types of photomas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/26G03F7/20H01L21/02H01L21/3213
CPCG03F1/26
Inventor 巫轶骏马莹
Owner SEMICON MFG INT (SHANGHAI) CORP
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