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Microwave and millimeter wave monolithic integration power amplifier

An integrated power, millimeter wave technology, applied in the system field, can solve the problems of small output power, large volume, small gain, etc., to achieve the effect of increasing output power and bandwidth, improving stability and consistency, and small size

Active Publication Date: 2015-09-09
NAT UNIV OF SINGAPORE SUZHOU RES INST +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the commonly used power amplifiers are mostly hybrid circuits and module circuits. The realization method is mainly composed of a single transistor and peripheral matching circuits. The main disadvantages of this type of power amplifier are: large volume, small output power, small gain, poor consistency, etc.

Method used

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  • Microwave and millimeter wave monolithic integration power amplifier
  • Microwave and millimeter wave monolithic integration power amplifier
  • Microwave and millimeter wave monolithic integration power amplifier

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Embodiment Construction

[0019] The specific implementation of the monolithic integrated power amplifier in the microwave and millimeter wave bands of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0020] Such as figure 1 As shown, a monolithic integrated power amplifier in the microwave and millimeter wave band includes an input Lange coupler 100, an output Lange coupler 400, a direct output terminal connected to the input Lange coupler 100 and the output Lange coupler The device 400 is directly connected to the first amplification branch 200 of the input terminal, the second amplification branch 300 connected to the coupling output terminal of the input Lange coupler 100 and the coupling input terminal of the output Lange coupler 400;

[0021] The first amplification branch 200 and the second amplification branch 300 include the same three-stage amplifying circuit, and the three-stage amplifying circuit includes a first-stage amplifying circu...

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Abstract

The invention discloses a microwave and millimeter wave monolithic integration power amplifier, which comprises an input Lange coupler, an output Lange coupler, a first amplification branch connected to the through output end of the input Lange coupler and the through input end of the output Lange coupler, and a second amplification branch connected to the coupling output end of the input Lange coupler and the coupling input end of the output Lange coupler; the first amplification branch and the second amplification branch comprise the same three stages of amplifier circuits; the three stages of amplifier circuits include a first-stage amplifier circuit, a second-stage amplifier circuit and a third-stage amplifier circuit which are connected in sequence. The microwave and millimeter wave monolithic integration power amplifier has high gain (greater than 19 dB) and high output power (greater than 36 dBm), and is stable under the rated work conditions, and can be widely applied to all kinds of electronic fields, radars and wireless communication systems.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a monolithic integrated power amplifier in the microwave and millimeter wave bands, which can be applied to various electronic radar and wireless communication systems in the microwave and millimeter wave bands. Background technique [0002] In the technical fields of millimeter-wave radar and communication, in order to enable the millimeter-wave receiver to detect small signals, a power amplifier is generally used in the front stage to receive the signal to overcome the noise problem in the latter stage. The power amplifier is located at the transmitter side and is directly connected to the antenna signal, so its noise characteristics will greatly affect the noise characteristics of the entire system. At the same time, the signal strength of the received antenna is generally weak, and the power amplifier must also meet certain noise figure requirements while meeting the powe...

Claims

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Application Information

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IPC IPC(8): H03F1/42H03F3/20
Inventor 郭永新仲正
Owner NAT UNIV OF SINGAPORE SUZHOU RES INST
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