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A preparing method of a double-light-emitting transition metal ion doped semiconductor quantum dot

A technology of transition metal ions and semiconductors, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of high toxicity of quantum dot materials, small Stokes shift, low fluorescence quantum yield, etc., and achieve simple preparation methods, The effect of large Stokes shift and high luminous efficiency

Inactive Publication Date: 2015-08-12
JILIN NORMAL UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of high toxicity, low fluorescence quantum yield and small Stokes shift of existing quantum dot materials, and to provide a preparation method of double light emitting transition metal ion doped semiconductor quantum dots

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  • A preparing method of a double-light-emitting transition metal ion doped semiconductor quantum dot
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  • A preparing method of a double-light-emitting transition metal ion doped semiconductor quantum dot

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preparation example Construction

[0025] The present invention provides a method for preparing dual light emitting transition metal ion doped semiconductor quantum dots, the method comprising:

[0026] Step 1: Mix acetate, sulfur powder and oil phase solvent to obtain a mixed solution;

[0027] Step 2: In an inert atmosphere, heat the mixed solution obtained in Step 1 to 200-260°C at a rate of 10-30°C / min, and maintain this temperature for 10 to 120 minutes to form a mixed liquid crystal core;

[0028] Step 3: Lower the reaction temperature to 100-150°C, then add the zinc precursor solution to the mixed liquid crystal core obtained in step 2, and heat it to 220-280°C at a rate of 10-30°C / min, and maintain this temperature 10~120min to form a mixture of zinc sulfide shell;

[0029] Step 4: The reaction temperature is lowered to 60-100° C., and then the solvent is added to the zinc sulfide shell mixture obtained in Step 3 to obtain dual light emitting transition metal ion-doped semiconductor quantum dots.

[0030] Accord...

Embodiment 1

[0036] Step 1: Add 0.02mmol copper acetate, 0.008mmol manganese acetate, 0.2mmol zinc acetate, 0.2mmol indium acetate, 0.8mmol sulfur powder, 4.0ml n-dodecanethiol and 6.0mL oleylamine to 50mL three In the neck flask, get the mixed solution;

[0037] Step 2: Vacuum multiple times and pass in inert gas to remove gas. Under the protection of argon, heat the mixed solution obtained in step 1 to 220°C at a rate of 15°C / min, and keep this temperature for 10 minutes to form Copper and manganese doped zinc, indium and sulfur crystal nuclei;

[0038] Step 3: Lower the reaction temperature to 100°C, mix 0.4mmol zinc acetate in 0.1mL oleylamine and 0.9mL octadecene into a zinc precursor solution, and then add the zinc precursor solution to the copper and manganese obtained in step 2. Doped with zinc, indium and sulfur crystal nuclei, heated to 240°C at a rate of 15°C / min, and maintained at this temperature for 20 minutes to form a zinc sulfide shell mixture;

[0039] Step 4: Add 10mL of tolu...

Embodiment 2

[0043] Step 1: Add 0.02mmol copper acetate, 0.008mmol manganese acetate, 0.2mmol zinc acetate, 0.2mmol indium acetate, 0.8mmol sulfur powder, and 10mL octadecenamine into a 50mL three-necked flask at room temperature to obtain a mixed solution ;

[0044] Step 2: Vacuum several times and pass in inert gas to remove gas. Under the protection of argon, heat the mixed solution obtained in step 1 to 200°C at a rate of 10°C / min, and keep this temperature for 20 minutes to form Copper and manganese doped zinc, indium and sulfur crystal nuclei;

[0045] Step 3: Lower the reaction temperature to 120°C, mix 0.4mmol zinc acetate in 0.1mL oleylamine and 0.9mL octadecene to form a zinc precursor solution, and then add the zinc precursor solution to the copper and manganese obtained in step 2. Doped with zinc, indium and sulfur crystal nuclei, heated to 220°C at a rate of 10°C / min, and maintained at this temperature for 10 minutes to form a zinc sulfide shell mixture;

[0046] Step 4: Add 10 mL ...

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Abstract

The invention provides a preparing method of a double-light-emitting transition metal ion doped semiconductor quantum dot, and belongs to the technical field of chemical engineering. The method includes mixing an acetate, sulfur powder and an oil phase solvent to obtain a mixed solution, heating the mixed solution to 200-260 DEG C at a speed of 10-30 DEG C / min, maintaining the temperature for 10-120 min to form mixed-solution crystal nucleuses, adding a zinc precursor solution into the obtained mixed-solution crystal nucleuses, heating to 220-280 DEG C at a speed of 10-30 DEG C / min, maintaining the temperature for 10-120 min to form a zinc sulfide shell mixed solution, and adding a solvent into the obtained zinc sulfide shell mixed solution to obtain the double-light-emitting transition metal ion doped semiconductor quantum dot. The method is simple. Experiments show that the color rendering index after the quantum dot is prepared into white-light LEDs can reach 95, and the luminous efficiency is 701 m / W.

Description

Technical field [0001] The invention belongs to the technical field of chemical engineering, and specifically relates to a method for preparing double-light emitting transition metal ions doped semiconductor quantum dots. Background technique [0002] According to ABB reports, the electricity consumption of the whole society was 4.2 trillion kWh in 2010, and in the short term it will increase to 6.15 trillion kWh in 2015, of which lighting consumes about 20% of the total electricity. Therefore, the development of efficient lighting methods is an inevitable choice for the development of the times. With the development of material science and optoelectronic technology, traditional light sources will gradually be replaced by environmentally friendly white LEDs due to factors such as low efficiency and high cost. White LEDs will serve as a new generation of lighting sources. Because of its many advantages such as higher efficiency, longer life and fast response time. At present, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/62
Inventor 赵家龙马瑞新袁曦李海波
Owner JILIN NORMAL UNIV
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