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Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor lasers, etc., can solve problems such as device characteristics, reliability impact, inhalation of impurities, difficult growth conditions, etc., to improve device characteristics and reliability Effect

Inactive Publication Date: 2015-07-29
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there is a problem that, in addition to being difficult to obtain growth conditions with good crystallinity, undesired impurities are absorbed into the carbon-doped layer near the active layer, which affects device characteristics and reliability.

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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Experimental program
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Embodiment approach 1

[0022] figure 1 It is a cross-sectional view showing the semiconductor device according to Embodiment 1 of the present invention. This semiconductor device is an avalanche photodiode as follows, that is, above an n-type InP substrate 1, layers having a carrier concentration of 3 to 5×10 18 cm -3 , an n-type InP buffer layer 2 with a thickness of 0.1-1 μm; a carrier concentration of 3-5×10 18 cm -3 , an n-type AlInAs buffer layer 3 with a thickness of 0.1-0.5 μm; an undoped AlInAs avalanche multiplication layer 4 with a thickness of 0.1-0.5 μm; a carrier concentration of 0.5-1×10 18 cm -3 , a p-type AlInAs electric field relaxation layer 5 with a thickness of 0.05-0.15 μm; a carrier concentration of 1-5×10 15 cm -3 , thickness 1 ~ 2μm n - Type InGaAs light absorbing layer 6; carrier concentration 0.01~0.1×10 15 cm -3 , thickness 0.5 ~ 1μm n - type InP window layer 7; and carrier concentration 1~5×10 18 cm -3 , a p-type InGaAs contact layer 8 with a thickness of 0.1-...

Embodiment approach 2

[0033] In Embodiment Mode 1, n-type AlInAs buffer layer 3 is doped with carbon using an organic halide to promote gettering. However, since carbon-doped AlInAs is p-type conduction, it inhibits n-type conduction by simultaneous doping of Si, and therefore it is necessary to control the carbon supply amount.

[0034] Therefore, in the present embodiment, carbon is doped together with Si in the n-type InP buffer layer 2 instead of the n-type AlInAs buffer layer 3 . If carbon is doped into InP, it shows n-type conduction. Therefore, since carbon functioning as an acceptor does not exist in the buffer layer, the impurity concentration control of the buffer layer becomes easy. In addition, impurities in the crystal growth furnace can be easily absorbed into InP. It is more difficult for impurities such as oxygen and carbon to be absorbed into InP than to be absorbed into AlInAs, so that the n-type InP buffer layer 2 having good crystallinity can be grown.

[0035] In addition, a...

Embodiment approach 3

[0037] In this embodiment, before forming the n-type InP buffer layer 2, CBr, which is a carbon additive material having a halogen as a constituent element, is added to 4 It is introduced into a crystal growth furnace, and the surface of n-type InP substrate 1 is etched and cleaned for 1 to 10 minutes. Thereafter, crystal growth is carried out in the same manner as in Embodiments 1 and 2.

[0038] The material introduced before growth is not just CBr 4 , can also be CCl 3 A carbon additive material having a halogen as a constituent element, such as Br (bromotrichloromethane), TBCl (terbium trichloride), or the like.

[0039] Alternatively, a material exhibiting a reducing action when thermally decomposed, such as an organometallic material containing Al (trimethylaluminum, etc.), may be introduced into the crystal growth furnace to reduce the surface of the n-type InP substrate 1 .

[0040] As described above, introducing a carbon additive material having a halogen in the c...

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Abstract

A method for manufacturing a semiconductor device includes: forming a buffer layer on a substrate; and sequentially forming an undoped multiplication layer, an electric field alleviating layer, a light absorption layer, and a window layer on the buffer layer, in that order, for forming an avalanche photodiode. Carbon is incorporated into the electric field alleviating layer as a p-type dopant, and a dopant impurity producing n-type conductivity and carbon are incorporated into the buffer layer.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device capable of improving device characteristics and reliability. Background technique [0002] In optical devices and electronic devices, a locally high-concentration p-type semiconductor layer is required to accompany higher performance. Therefore, carbon as a low-diffusion dopant is sometimes used (see, for example, Non-Patent Documents 1 and 2). Among optical devices, in order to achieve low noise, high sensitivity, and high-speed response, an electron-multiplying avalanche photodiode using AlInAs for the multiplication layer has attracted attention. A highly doped p-type AlInAs layer of carbon is used in the electric field relaxation layer for controlling the avalanche mode. In addition, in electronic devices, carbon is used as a dopant for the p-type base layer in order to increase the efficiency of a heterojunction bipolar transistor having a signal amplification func...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/107H01L31/0304H01L21/331H01L29/20H01S5/323
CPCH01L29/201H01L29/207H01L31/03046H01L21/02546H01S5/34313H01L21/30604H01L31/1075H01S5/34353H01L29/1004H01L29/6631H01L29/66522H01L31/1844H01L31/03042H01L29/1033H01L21/02392H01L21/02461H01L21/02463H01L21/02505H01L21/02576H01L21/0262H01L29/7785H01S5/305H01S5/309H01S5/3407H01S5/34306H01L21/30621Y02E10/544
Inventor 山口晴央
Owner MITSUBISHI ELECTRIC CORP
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