Cu-ga alloy sputtering target and method of manufacturing the same

A manufacturing method and technology for sputtering targets, which are applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problems of adding elements and multi-intermetallic compounds, unable to use alloy manufacturing, etc. Manufacturing cost, suppression of reduction in conversion efficiency, and less effect

Active Publication Date: 2017-07-11
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similarly, since the amount of added elements in the alloy is very small, it cannot be applied to the manufacture of alloys with a large amount of added elements.
[0016] Regarding the above-mentioned Patent Documents 3 to 5, although examples of production using the continuous casting method are shown, they are all added to pure metals or alloy materials with added trace elements, and it cannot be said that they can solve the problem of the large amount of added elements and the easy occurrence of intermetallic alloys. Problems Existing in Manufacture of Compound Segregated Cu-Ga Alloy Target

Method used

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  • Cu-ga alloy sputtering target and method of manufacturing the same
  • Cu-ga alloy sputtering target and method of manufacturing the same
  • Cu-ga alloy sputtering target and method of manufacturing the same

Examples

Experimental program
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Effect test

Embodiment 1

[0071] 20 kg of raw materials containing copper (Cu: purity 4N) and Ga (purity: 4N) whose composition ratio was adjusted so that the Ga concentration was 22 atomic % were put into a carbon crucible, and the inside of the crucible was made a nitrogen atmosphere, and heated to 1250°C. This high-temperature heating is for welding the dummy bar and the Cu—Ga alloy melt.

[0072] In the heating of the crucible, a resistance heating device (graphite element) was used. The shape of the melting crucible was 140 mmφ×400 mmφ, the material of the mold was made of graphite, the shape of the ingot was a plate of 65 mmw×12 mmt, and continuous casting was performed.

[0073] After the raw material is smelted, the temperature of the molten liquid is lowered to 990°C (a temperature about 100°C higher than the melting point), and the drawing starts when the temperature of the molten liquid and the temperature of the mold are stable. Since the dummy rod is inserted at the front end of the mold,...

Embodiment 2

[0079] 20 kg of raw materials containing copper (Cu: purity 4N) and Ga (purity: 4N) whose composition ratio was adjusted so that the Ga concentration was 22 atomic % were put into a carbon crucible, and the inside of the crucible was made a nitrogen atmosphere, and heated to 1250°C. This high-temperature heating is for welding the dummy bar and the Cu—Ga alloy melt.

[0080] In the heating of the crucible, a resistance heating device (graphite element) was used. The shape of the melting crucible was 140 mmφ×400 mmφ, the material of the mold was made of graphite, the shape of the ingot was a plate of 65 mmw×12 mmt, and continuous casting was performed.

[0081] After the raw material is smelted, the temperature of the molten liquid is lowered to 990°C (a temperature about 100°C higher than the melting point), and the drawing starts when the temperature of the molten liquid and the temperature of the mold are stable. Since the dummy rod is inserted at the front end of the mold,...

Embodiment 3

[0087] 20 kg of raw materials containing copper (Cu: purity 4N) and Ga (purity: 4N) whose composition ratio was adjusted so that the Ga concentration was 25 atomic % were put into a carbon crucible, and the inside of the crucible was made a nitrogen atmosphere, and heated to 1250°C. This high-temperature heating is for welding the dummy bar and the Cu—Ga alloy melt.

[0088] In the heating of the crucible, a resistance heating device (graphite element) was used. The shape of the melting crucible was 140 mmφ×400 mmφ, the material of the mold was made of graphite, the shape of the ingot was a plate of 65 mmw×12 mmt, and continuous casting was performed.

[0089] After the raw material is smelted, the temperature of the molten liquid is lowered to 990°C (a temperature about 100°C higher than the melting point), and the drawing starts when the temperature of the molten liquid and the temperature of the mold are stable. Since the dummy rod is inserted at the front end of the mold,...

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Abstract

A Cu-Ga alloy sputtering target, which is a smelted and cast Cu-Ga alloy sputtering target comprising more than 22 atomic % and less than 29 atomic % of Ga, the rest being Cu and unavoidable impurities, characterized in It has a eutectoid structure including a mixed phase of a ζ phase and a γ phase, the ζ phase is an intermetallic compound phase of Cu and Ga, and when the diameter of the γ phase is D μm and the Ga concentration is C atoms %, satisfy the relational expression of D≤7×C‑150. A sputtering target with a cast structure has an advantage that gas components such as oxygen can be reduced compared to a sintered target. By continuously solidifying a sputtering target having this cast structure under solidification conditions at a constant cooling rate, a target with a high-quality cast structure in which oxygen is reduced and segregated phases are dispersed can be obtained.

Description

technical field [0001] The present invention relates to a Cu-Ga alloy sputtering target used when forming a Cu-In-Ga-Se (hereinafter referred to as CIGS) quaternary alloy thin film as a light-absorbing layer of a thin-film solar cell layer, and a method for producing the target. Background technique [0002] In recent years, mass production of high-efficiency CIGS-based solar cells has progressed as thin-film solar cells, and vapor deposition and selenization are known as methods for producing light-absorbing layers. Although the solar cells manufactured by the evaporation method have the advantages of high conversion efficiency, they have the disadvantages of low film formation speed, high cost, and low productivity, while the selenization method is more suitable for industrial mass production. [0003] The approximate process of the selenization method is as follows. First, a molybdenum electrode layer is formed on a soda-lime glass substrate, a Cu-Ga layer and an In laye...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B22D11/00B22D11/20B22D11/22B22D27/04C22C1/02C22C9/00
CPCB22D11/00B22D11/004B22D11/20B22D11/22B22D27/04C22C1/02C22C9/00C23C14/3414B22D11/041B22D11/045B22D11/124B22D11/126C22C28/00H01J37/3429C23C14/14H01J2237/3322
Inventor 田村友哉
Owner JX NIPPON MINING & METALS CORP
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