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a bi 0.85‑x pr 0.15 ae x fe 0.97 mn 0.03 o 3 Ferroelectric thin film and preparation method thereof

A ferroelectric thin film and thin film technology, applied in the direction of coating, etc., can solve the problems of weak magnetism, large coercive field, and high leakage current of the film, and achieve the effects of reduced content, small coercive field, and low leakage current density

Active Publication Date: 2017-06-06
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently used to prepare BiFeO 3 There are many methods for thin films, but the prepared BiFeO 3 The leakage current of the film is high, the coercive field is large, the magnetism is weak, and the saturated P-E hysteresis loop can only be observed under a certain thickness and high voltage

Method used

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  • a bi <sub>0.85‑x</sub> pr <sub>0.15</sub> ae <sub>x</sub> fe <sub>0.97</sub> mn <sub>0.03</sub> o <sub>3</sub> Ferroelectric thin film and preparation method thereof
  • a bi <sub>0.85‑x</sub> pr <sub>0.15</sub> ae <sub>x</sub> fe <sub>0.97</sub> mn <sub>0.03</sub> o <sub>3</sub> Ferroelectric thin film and preparation method thereof
  • a bi <sub>0.85‑x</sub> pr <sub>0.15</sub> ae <sub>x</sub> fe <sub>0.97</sub> mn <sub>0.03</sub> o <sub>3</sub> Ferroelectric thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1, dissolving bismuth nitrate, praseodymium nitrate, strontium nitrate, ferric nitrate and manganese nitrate in a solvent at a molar ratio of 0.88:0.15:0.02:0.97:0.03 (AE=Sr, x=0.02, bismuth nitrate excess 5%) , to obtain a stable Bi with a total metal ion concentration of 0.3 mol / L 0.83 PR 0.15 Sr 0.02 Fe 0.97 mn 0.03 o 3 Precursor solution; wherein the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0033] Step 2: Select the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean it with ultrasonic waves for 10 minutes, then wash the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60°C Baked for 5 minutes, then took it out and let it stand to room temperature; finally, placed the substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin-coating ...

Embodiment 2

[0043] Step 1, dissolving bismuth nitrate, praseodymium nitrate, strontium nitrate, ferric nitrate and manganese nitrate in a solvent in a molar ratio of 0.87:0.15:0.03:0.97:0.03 (AE=Sr, x=0.03, bismuth nitrate excess 5%) , to obtain a stable Bi with a total metal ion concentration of 0.25mol / L 0.82PR 0.15 Sr 0.03 Fe 0.97 mn 0.03 o 3 Precursor solution; wherein the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 2.5:1;

[0044] Step 2: Select the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean it with ultrasonic waves for 10 minutes, then wash the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60°C Baked for 5 minutes, then took it out and let it stand to room temperature; finally, placed the substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin-coating...

Embodiment 3

[0047] Step 1, dissolving bismuth nitrate, praseodymium nitrate, calcium nitrate, iron nitrate and manganese nitrate in a solvent in a molar ratio of 0.86:0.15:0.04:0.97:0.03 (AE=Ca, x=0.04, bismuth nitrate excess 5%) , to obtain a stable Bi with a total metal ion concentration of 0.35 mol / L 0.81 PR 0.15 Ca 0.04 Fe 0.97 mn 0.03 o 3 Precursor solution; wherein the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3.5:1;

[0048] Step 2: Select the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean it with ultrasonic waves for 10 minutes, then wash the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60°C Baked for 5 minutes, then took it out and let it stand to room temperature; finally, placed the substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin-coating B...

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Abstract

The invention provides a Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film and a preparation method thereof. The method comprises the following steps: preparing a Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 precursor solution from bismuth nitrate, praseodymium nitrate, hydrogen nitrate AE, ferric nitrate and manganous nitrate, wherein AE is Sr, Ca or Ba, and x=0.02-0.05; spinning the precursor solution on a substrate; and then spinning, drying and annealing, so as to obtain the Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film. The Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film is simple in demands on equipment; the experiment condition is easy to achieve; the doping amount is easy to control; the ferroelectric property of the film can be greatly improved; and the prepared Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film is good in uniformity, low in leakage current, and low in coercive field, and has relatively high remanent polarization.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a Bi 0.85-x PR 0.15 AE x Fe 0.97 mn 0.03 o 3 Ferroelectric thin film and its preparation method. Background technique [0002] BiFeO 3 (BFO) is a typical single-phase multiferroic material, which has both ferroelectricity and ferromagnetism at room temperature, and has a high Curie temperature (T C ~1103K) and Neil temperature (T N ~640K). The coexistence of ferroelectricity and magnetism in BFO makes the material have a magnetoelectric coupling effect, that is, the electric field can induce magnetization and the magnetic field can induce polarization in the material. This feature has an attractive application prospect in the new memory element of magnetic read and write. For example, magnetoelectric conversion converters, optical switches, optical holographic storage and sensors, etc. [0003] The storage of information depends on the direction of polarization. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22
CPCC03C17/22C03C2217/28
Inventor 谈国强晏霞任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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