Novel anti-counterfeit mark and manufacturing method thereof
An anti-counterfeiting label and a new type of technology, applied in the field of anti-counterfeiting, can solve the problems of limited application, complex and tedious preparation process of anti-counterfeiting technology, and high cost
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Embodiment 1
[0066] A new type of anti-counterfeiting mark, comprising a plastic sheet and an invisible anti-counterfeiting pattern arranged on the surface of the plastic sheet, the surface of the plastic sheet includes an invisible anti-counterfeiting pattern area and a non-pattern area, and the invisible anti-counterfeiting pattern area is a thin film formed of micro-nano material silver particles Layer constitution, its preparation method, comprises the following steps:
[0067] (1) plasma surface treatment
[0068] The plastic sheet is treated with plasma surface for 30s and then used for subsequent inkjet printing;
[0069] (2) Inkjet printing
[0070] Disperse silver particles with a particle size of 20 nanometers in water to obtain a silver particle mixture with a mass concentration of 0.05%, add the resulting silver particle mixture to an inkjet printer, and input a preset anti-counterfeiting pattern into the computer, and the Printed on the plastic sheet treated with plasma surf...
Embodiment 2
[0072] A new type of anti-counterfeiting mark, comprising a glass slide and an invisible anti-counterfeiting pattern arranged on the surface of the glass slide, the surface of the glass slide includes an invisible anti-counterfeiting pattern area and a non-pattern area, and the invisible anti-counterfeiting pattern area is a film formed by micro-nano material gold particles Layer constitution, its preparation method, comprises the following steps:
[0073] (1) plasma surface treatment
[0074] The slides were treated by plasma surface for 25s before use;
[0075] (2) Paste the pattern film
[0076] Attach the PDMS film with the preset anti-counterfeiting pattern to the surface of the glass slide to cover the non-patterned area;
[0077] (3) Vacuum evaporation
[0078] Put the glass slide with PDMS film into the vacuum evaporation machine, and vacuum-deposit a layer of gold nanoparticles on the invisible anti-counterfeiting pattern area. The evaporation time is 5s. After tak...
Embodiment 3
[0080] A new type of anti-counterfeiting mark, including a silicon wafer and an invisible anti-counterfeiting pattern arranged on the surface of the silicon wafer. The surface of the silicon wafer includes an invisible anti-counterfeiting pattern area and a non-pattern area. The resist is formed after photolithography, and its preparation method comprises the following steps:
[0081] (1) spin coating
[0082] The liquid photosensitive polyimide photoresist is spin-coated on the surface of the silicon wafer, and the coating is carried out in two steps by using a coating machine: first, spin coating at a spin coating speed of 500 rpm for 30 seconds, and then spin coating at 1500 rpm 1min;
[0083] (2) Nanoimprinting
[0084] Align the imprint template with the micro-nano structure with the silicon wafer and press it into the photoresist, use UV curing (power 100W) for 10s, release the mold, and peel off the polyimide film to obtain a new type of anti-counterfeiting label.
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