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Overload protector of main-power MOSFET (metal-oxide semiconductor field effect transistor) of boost circuit

A boost circuit, overload protection technology, applied in the direction of emergency protection circuit devices, electrical components, etc., can solve problems such as damage, large current of main power MOSFET, etc.

Active Publication Date: 2015-02-18
GUANGDONG VTRON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in practical applications, especially in a converter device with a low voltage input of 12V and a high voltage output of 50V, and the output to a converter device with a power of up to several hundred watts, the input current is 4 to 5 times the output current, causing the main power MOSFET to fail due to overcurrent during operation. large and easily damaged

Method used

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  • Overload protector of main-power MOSFET (metal-oxide semiconductor field effect transistor) of boost circuit
  • Overload protector of main-power MOSFET (metal-oxide semiconductor field effect transistor) of boost circuit
  • Overload protector of main-power MOSFET (metal-oxide semiconductor field effect transistor) of boost circuit

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Embodiment Construction

[0013] In order to make the purpose, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, and do not limit the protection scope of the present invention.

[0014] The overload protection device of the main power MOSFET of the BOOST step-up circuit of the present invention, such as figure 1 Shown, including reference signal input circuit, overcurrent sampling circuit and comparator.

[0015] Wherein, the reference signal input circuit inputs a reference voltage to the non-inverting input terminal of the comparator U3A, and the overcurrent sampling circuit collects the conduction voltage drop of the main power MOSFET of the BOOST booster circuit, and superimposes the conduction voltage drop with a DC voltage to form Inve...

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Abstract

The invention discloses an overload protector of a main-power MOSFET (metal-oxide semiconductor field effect transistor) of a boost circuit. The overload protector can sample conducting voltage drop of the MOSFET, uses the preset reference voltage as threshold, and judges whether the main-power MOSFET is overloaded or not according to the fact whether the conducting voltage drop exceeds the reference voltage or not. When overloading, the overload protector can cut off output of a driving control circuit of the main-power MOSFET, and the main-power MOSFET stops working, so that the purpose of overload protection is realized.

Description

technical field [0001] The invention relates to the technical field of power supplies, in particular to an overload protection device for a main power MOSFET of a BOOST booster circuit. Background technique [0002] Laser light source equipment often adopts a constant current drive mode. In the intermediate stage DC-to-DC BOOST booster circuit, the safety and reliability of the main power MOSFET is an important design index for whether the laser light source can work for a long time and is not easy to be damaged. [0003] However, in practical applications, especially in a converter device with a low voltage input of 12V and a high voltage output of 50V, and the output to a converter device with a power of up to several hundred watts, the input current is 4 to 5 times the output current, causing the main power MOSFET to fail due to overcurrent during operation. Large and easily damaged. Contents of the invention [0004] Based on the above situation, the present invention...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/10
Inventor 帅孟奇
Owner GUANGDONG VTRON TECH CO LTD
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