Organic electroluminescence device and preparation method thereof
An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor stability, metals are easy to lose electrons, and electron transmission is hindered, so as to improve injection efficiency, Improved reflection of light and high luminous efficiency
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[0056] see figure 2 , a method for preparing an organic electroluminescent device according to one embodiment, comprising the following steps.
[0057] Step S110: providing an anode conductive substrate, and forming a hole injection layer by vacuum evaporation on the anode conductive substrate.
[0058] The anode conductive substrate 10 is a glass substrate with conductive patterns laminated on its surface, preferably indium tin oxide glass substrate (ITO), aluminum zinc oxide glass substrate (AZO) or indium zinc oxide glass substrate (IZO).
[0059] The glass substrate laminated with the conductive thin film is subjected to photolithography treatment, and cut into the required size to obtain the glass substrate laminated with the conductive pattern, that is, the anode conductive substrate. The conductive film is an ITO film, AZO film or IZO film.
[0060] The hole injection layer is formed by vacuum evaporation on the anode conductive substrate, and the working voltage is ...
Embodiment 1
[0091] The structure is ITO / WO 3 / TCTA / Alq 3 / TAZ / LiF / NaF / ReO 3 :SiO2 2 : Fabrication of Mg / ZnS Organic Electroluminescent Devices
[0092] (1) To provide an anode conductive substrate, first, the glass laminated with indium tin oxide film is subjected to photolithography, and cut into the required size to obtain the glass laminated with ITO conductive patterns, that is, the anode conductive substrate, expressed as ITO. Ultrasonic wash the anode conductive substrate with detergent and deionized water for 15 minutes in sequence to remove organic pollutants on the surface of the anode conductive substrate, dry and set aside;
[0093] (2) The hole injection layer is formed by vacuum evaporation on the anode conductive substrate, and the working pressure is 8×10 -5 Pa, the rate of vacuum evaporation is 0.2nm / s, the material of the hole injection layer is tungsten trioxide, and the hole injection layer is expressed as WO 3 , the thickness of the hole injection layer is 35 nano...
Embodiment 2
[0103] The structure is AZO / V 2 o 5 / NPB / ADN / Bphen / CsF / Na 2 CO 3 / Re 2 o 7 Fabrication of :NiO:Sr / CuS Organic Electroluminescent Devices
[0104] (1) To provide an anode conductive substrate, first, the glass laminated with aluminum zinc oxide film is photolithographically processed, and cut into the required size to obtain the glass laminated with AZO conductive patterns, that is, the anode conductive substrate, expressed as AZO. Ultrasonic wash the anode conductive substrate with detergent and deionized water for 15 minutes in sequence to remove organic pollutants on the surface of the anode conductive substrate, dry and set aside;
[0105] (2) The hole injection layer is formed by vacuum evaporation on the anode conductive substrate, and the working pressure is 2×10 -3 Pa, the rate of vacuum evaporation is 0.1nm / s, the material of the hole injection layer is vanadium pentoxide, and the hole injection layer is expressed as V 2 o 5 , the thickness of the hole injectio...
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