Three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector and preparation method thereof

Abstract

The invention relates to the technical field of detectors, in particular to a three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector and a preparation method of the three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector. The three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector comprises a substrate, a buffer layer, an n-type doping nitride ohmic electrode contact layer, a Pi-type nitride active layer, a p-type doping nitride layer, a p-type heavy-doping nitride ohmic contact layer, n-type ohmic contact electrodes and a p-type ohmic contact electrode, wherein the buffer layer, the n-type doping nitride ohmic electrode contact layer, the Pi-type nitride active layer, the p-type doping nitride layer and the p-type heavy-doping nitride ohmic contact layer are sequentially grown on the substrate through epitaxial growth methods such as a molecular beam epitaxial method or an organometallic chemical vapor deposition epitaxial method; the n-type ohmic contact electrodes are manufactured on the n-type layer, and the p-type ohmic contact electrode is manufactured on the p-type layer. The three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector can solve the problems that a traditional p-i-n structured device leaks a large number of currents and the edge of the traditional p-i-n structured device can be broken through easily in advance; moreover, a three-mesa structure conducts double-suppression protection on edge electric fields of a strong electric field region and a weak electric field region of a p-Pi-n structured device, so that the edge electric field is effectively prevented from being broken through in advance.

Description

technical field [0001] The present invention relates to the technical field of detectors, more specifically, to a three-mesa p-π-n structure Group III nitride semiconductor avalanche photodetector and a preparation method thereof. Background technique [0002] With the rapid development of information technology, ultraviolet detection technology plays an increasingly important role in the field of modern photoelectric information detection. At present, ultraviolet detectors have a wide range of application requirements in military or civilian fields such as flame detection, environmental monitoring, space optical communications, missile early warning systems, and quantum communications. Group III nitride semiconductors represented by GaN-based materials (including their binary compounds GaN, InN, and AlN, ternary compounds InGaN, AlGaN, and AlInN, and quaternary compounds AlInGaN) have large band gaps, direct band gaps, and electron migration. High efficiency, high breakdow...

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Problems solved by technology

[0011] In order to overcome at least one defect described in the above-mentioned prior art, the present invention provides a three-mesa p-π-n structure Group III nitride semiconductor avalanche photodetector and its preparation method, the purpose of which is to further improve the leakage of traditional p-i-n structure devices. The current is large and the problem of early edge breakdown is prone to occur

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