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Implementation and enhancement method for ZnO single-mode ultraviolet lasers

An ultraviolet laser and single-mode technology, which is applied in the direction of devices for controlling laser output parameters, lasers, laser components, etc., can solve the problems of large optical loss, small cavity size, and unfavorable applications, and achieve small cavity size, The effect of increasing the Q value and reducing the lasing threshold

Inactive Publication Date: 2014-12-24
SOUTHEAST UNIV
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Problems solved by technology

Due to the small cavity size of submicron ZnO, the optical loss is relatively large, which is not conducive to its application in the fields of optics and optoelectronics

Method used

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  • Implementation and enhancement method for ZnO single-mode ultraviolet lasers
  • Implementation and enhancement method for ZnO single-mode ultraviolet lasers
  • Implementation and enhancement method for ZnO single-mode ultraviolet lasers

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Experimental program
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Embodiment 1

[0034] 1. Mix and grind ZnO powder and carbon powder with a purity of more than 99.99% at a mass ratio of 1:1 for about 20 minutes, then take 0.5 g of the ground mixture and place it in a quartz boat;

[0035] 2. Clean the 2cm*2.5cm silicon wafer substrate sequentially by ultrasonic cleaning with acetone, ethanol and deionized water, blow dry with nitrogen, cover the above-mentioned quartz boat with the polished side down, and then place the quartz boat on a In the quartz tube, put the quartz tube into a horizontal tube furnace at 1150°C and keep it warm for 45 minutes to generate a single ZnO nanowire array with a diameter of submicron (about 600 nanometers) on the silicon wafer substrate;

[0036] 3. Contact the side of the silicon wafer substrate where the ZnO nanowire array grows with the cleaned quartz substrate, compact it gently, and then carefully remove the silicon wafer substrate and the quartz substrate, leaving a little dispersion on the quartz substrate. ZnO nanow...

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Abstract

The invention discloses an implementation and enhancement method for ZnO single-mode ultraviolet lasers. Single-layer graphene prepared according to the chemical vapor deposition method or the mechanical exfoliation method is transferred onto the surfaces of ZnO nanowires respectively with the submicron diameter in a covering mode, so that graphene / ZnO nanowire composite structure microcavities are formed. Due to the fact that the range of a light field is effectively limited by plasmas on the surface of the graphene, the optical loss of the ZnO nanowires can be greatly reduced, the lasing threshold value is effectively reduced, the quality factor of a micro laser device is improved, and the intensity of the ultraviolet lasers of the micro laser device is enhanced. The very beneficial method is provided for a composite high-performance photoelectric device, and meanwhile the potential applications of the device to the aspects of ultrafast information processing, nanometer microimaging, nanometer photolithography, biomedicine, super sensing and the like are developed.

Description

technical field [0001] The invention relates to the technical field of ZnO ultraviolet laser, in particular to a method for realizing and enhancing ZnO single-mode ultraviolet laser. Background technique [0002] High-performance UV lasers with good monochromaticity (i.e., narrow spectral linewidth, single-mode) have attracted widespread interest in the scientific community due to their wide application in specific protein detection, discrimination of rotational energy in small molecules, and ultrasensitive optical sensors. focus on. In order to obtain this type of single-mode micro-laser, people have carried out continuous research and exploration. According to the results of numerical simulations, a general approach to obtain single-mode microlasers is to use distributed Bragg reflectors (DBR) or distributed feedback (DFB) gratings. Another possible way is to use the vernier effect (Vernier effect) for mode selection. For example, Xu Lei et al. have reported that by cou...

Claims

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Application Information

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IPC IPC(8): H01S5/10H01S5/028H01S5/06
Inventor 徐春祥理记涛田正山林毅卢俊峰王悦悦
Owner SOUTHEAST UNIV
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