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A kind of led tube core with ito nano-column mesh film and preparation method thereof

A technology of nanocolumns and LED epitaxial wafers, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., and can solve the problem that ITO nanocolumn films cannot be used for current spreading layers

Active Publication Date: 2017-02-08
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this patent, the ITO three-dimensional electrode is mainly realized through the oblique evaporation of electron beams, and the thin film is still in the process of physical evaporation, and it is not possible to directly apply the existing semiconductor production line equipment to directly realize the three-dimensional electrode evaporation.
[0006] The article "Vol.17, No.23 / OPTICS EXPRESS200921250-21256" gives a method of using electron beam tilt angle to evaporate ITO nanocolumns to improve light extraction efficiency on GaN LED, but the method mentions that electron beam evaporation requires tilt angle Evaporation, the gas atmosphere is N 2 In addition, the ITO nanocolumn film mentioned in the article cannot be used for the current spreading layer, and it needs to be prepared on the basis of an existing thin ITO thin film, so as to effectively improve the current spreading layer of light output

Method used

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  • A kind of led tube core with ito nano-column mesh film and preparation method thereof
  • A kind of led tube core with ito nano-column mesh film and preparation method thereof
  • A kind of led tube core with ito nano-column mesh film and preparation method thereof

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Embodiment 1

[0039] The LED epitaxial wafer in this embodiment is a GaN epitaxial wafer.

[0040] A preparation method of an LED tube core with an ITO nanocolumn reticular film, comprising the following steps:

[0041] Step 1) Clean the GaN epitaxial wafer. The cleaning method for the LED epitaxial wafer is as follows: boil off the surface grease of the LED epitaxial wafer with acetone, remove the acetone with ethanol or isopropanol, and remove the LED epitaxial wafer with reducing hydrochloric acid or aqua regia. The oxide layer on the surface of the chip, and finally clean and dry the LED epitaxial wafer with deionized water;

[0042] Step 2) Prepare the ITO nano-column network film on the LED epitaxial wafer after cleaning. The preparation method is to use the VLS crystal growth mechanism to directly evaporate the ITO nano-column network film on the surface of the LED epitaxial wafer under a high-temperature vacuum environment. The high temperature environment refers to the vaporizatio...

Embodiment 2

[0050] Such as Figure 4 shown.

[0051] This embodiment provides an LED die with an ITO nanocolumn network film prepared by the method described in Example 1, including a GaN epitaxial wafer and an ITO nanocolumn network film prepared on the GaN epitaxial wafer. The thickness of the ITO nanocolumn network thin film is 300nm.

Embodiment 3

[0056] Such as Figure 6 shown.

[0057] As described in Example 1, a method for preparing an LED tube core with an ITO nanocolumn reticular film, the difference is that the LED epitaxial wafer is a GaAs quaternary epitaxial wafer of AlGaInP quaternary red-yellow light;

[0058] The step (1) cleaning the GaAs quaternary epitaxial wafer to remove back phosphorus;

[0059] The step (2) uses electron beams to directly evaporate the ITO nano-column network film on the GaAs quaternary epitaxial wafer in a high-temperature vacuum atmosphere, wherein the temperature of the surface of the GaAs quaternary epitaxial wafer is 260 ° C, and the oxygen flow rate is 0 sccm / m 3 , vacuum degree≤3×10 -5 Pa vacuum environment, vapor deposition of ITO nano-column network film 220nm;

[0060] The step (3) prepares an ohmic contact layer on the LED epitaxial wafer treated in the step (2), that is, prepares the P electrode and the N electrode of the LED chip, and finally makes the LED die, and th...

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Abstract

The invention relates to a method for preparing an LED pipe core with ITO nanorod net-shaped thin films. The method includes the step that in a vacuum environment, the ITO nanorod net-shaped thin films are formed directly through evaporation of electron beams on the surface of an LED epitaxial wafer according to a VLS crystal growth mechanism, wherein the VLS crystal growth mechanism is that at a certain temperature, metal drops are formed on the LED epitaxial wafer, ITO gaseous atoms or molecules are continuously dissolved in the metal drops and precipitated, ITO grows in a crystal whisker mode, and therefore the ITO nanorod net-shaped thin films are formed. Through special process parameters and by the application of the VLS crystal growth mechanism, the prepared thin films have the characteristics of crystals, and meanwhile the thin films are ranked in a net shape without an order, and the current expansion and coarsened light extraction of the surface of an LED are achieved. The thin files can be produced on a large scale on an LED device in an electron beam evaporating mode in the vacuum environment. Meanwhile, due to the fact that the prepared nanorod net-shaped thin films are ranked without the order, light can be emitted by a large angle through a nanorod waveguide, light extraction efficiency can be improved to a great extent, the process technology is simple, and the index of the performance of the device is high.

Description

technical field [0001] The invention relates to an LED tube core with an ITO nano-column mesh film and a preparation method thereof, belonging to the technical field of optoelectronic device applications. Background technique [0002] With the wide application of LEDs in lighting and display screens, the requirements for the performance indicators of LED dies are getting higher and higher. How to improve the light intensity of GaN LEDs has become a hot spot in product market competition. With the development of MOCVD epitaxial growth technology and multi-quantum well structure, people have made breakthroughs in precisely controlling epitaxial growth, doping concentration and reducing dislocations, and the internal quantum efficiency of epitaxial wafers has been greatly improved. Like AlInGaP-based LEDs, the internal quantum efficiency is close to the limit, up to 100%. Since the external quantum efficiency of the LED depends on the internal quantum efficiency of the epitaxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/42H01L21/20C23C14/30
CPCC23C14/30H01L21/02697H01L33/42H01L2933/0016
Inventor 沈燕徐现刚刘青徐化勇王英
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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