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Graphite seed crystal support for silicon carbide crystal growth

A crystal growth, silicon carbide technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc.

Inactive Publication Date: 2014-12-24
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to overcome the defects of the existing graphite seed crystal support for silicon carbide crystal growth, and the invention provides a graphite seed crystal support for silicon carbide crystal growth

Method used

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  • Graphite seed crystal support for silicon carbide crystal growth
  • Graphite seed crystal support for silicon carbide crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] First, put the graphite crucible with silicon carbide raw material in the material area and the graphite seed crystal holder without seed crystal on the upper part into the thermal insulation carbon felt, and then put it into the crystal growth furnace chamber, and the vacuum degree is pumped to 1.0×10 -2Below Pa, inflate to the required pressure such as 30 Torr, start to heat up to the target temperature such as 2100°C, grow for a certain period of time such as 10h, cool down to room temperature by program, and start the furnace to obtain polycrystalline silicon carbide with a thickness of about 0.5mm on the graphite seed crystal support. layer, and finally a polycrystalline silicon carbide layer with a flatness of 30 μm and a thickness of 0.2 mm that can be used for SiC crystal growth is obtained by mechanical processing on the graphite seed crystal support. Among them, the thickness of the polycrystalline silicon carbide polycrystalline layer can be adjusted according...

Embodiment 2

[0032] The graphite seed crystal holder with the polycrystalline silicon carbide layer deposited on the surface obtained in the above examples is used for crystal growth by the PVT method, and the crystal growth surface obtained by observing the obtained crystal growth surface through a white light interference microscope, as shown in figure 2 As shown in (a), it can be clearly seen that there are no defects such as micropipes, black spots and holes on the crystal growth surface.

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Abstract

The invention relates to a graphite seed crystal support for silicon carbide crystal growth. The graphite seed crystal support comprises a graphite base and a compact silicon carbide polycrystal layer arranged on the surface of one side, facing to seed crystal, of the graphite base, and the seed crystal is connected to the compact silicon carbide polycrystal layer through a binding agent.

Description

technical field [0001] The invention belongs to the field of silicon carbide crystals, in particular to a graphite seed crystal support for growing silicon carbide crystals. Background technique [0002] At present, the most effective method for growing SiC crystals is the physical vapor transport (PVT) method. The crucible is composed of an upper seed crystal holder and a lower material chamber. The upper seed crystal holder is used to bond the seed crystal, and the lower material chamber is used to hold SiC raw materials. . The crucible material used to grow SiC crystals is mainly tri-high graphite (high strength, high density and high purity). Graphite is widely used in growing SiC crystals due to its high temperature stability, good thermal conductivity, convenient processing, and low price. [0003] During the growth of SiC crystal, the SiC seed crystal is directly bonded to the graphite seed crystal holder through a binder. After the crystal growth is completed, the ...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36
Inventor 高攀陈辉刘熙孔海宽郑燕青施尔畏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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