A Method for Improving the Density of Parallel Arrays of Carbon Nanotubes Using Elastic Material Poisson's Ratio

Abstract

The invention discloses a method for increasing the density of parallel arrays of carbon nanotubes by means of the Poisson's ratio of an elastic material. First, the parallel array of carbon nanotubes grown on the substrate is transferred to elastic materials, such as polymethyl methacrylate, silicone rubber or polyester, and other elastic materials; then stretch the carbon nanotubes along the direction of extension. The elastic material makes it shrink in the direction perpendicular to the extension of carbon nanotubes, thereby obtaining high-density carbon nanotubes; finally, the parallel array of carbon nanotubes on the film is transferred to the target substrate. The method of the invention is simple and practical, high in efficiency and low in cost, and can produce high-density and high-quality parallel arrays of pure semiconductor carbon nanotubes.

Description

technical field [0001] The invention relates to a method for increasing the density of parallel arrays of carbon nanotubes, in particular to a method for increasing the density of parallel arrays of carbon nanotubes by means of the Poisson's ratio of an elastic material. Background technique [0002] Carbon nanotube (CNT) is a perfect one-dimensional material with ultra-long mean free path, high mobility and saturation velocity, strong flexibility and chemical stability. Compared with traditional silicon-based field-effect transistors (MOSFETs), carbon nanotube field-effect transistors (CNFETs) have excellent electrostatic control capabilities and device performance, and are a new generation of semiconductor technology that is expected to replace silicon-based chip technology. [0003] Due to the low driving current of a single carbon nanotube field effect transistor, the device is easily affected by external parasitic capacitance, and the device speed is slow. Therefore, th...

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Problems solved by technology

However, this method is only suitable for increasing the density of carbon nanotube arrays grown perpendicular to the substrate. For carbon nanotubes grown parallel to the substrate, which may have important application values ​​in electronic devices, due to its large contact area with the substrate, the range The De Waals force is relatively stronger. Direct sliding will cause the carbon nanotubes to be wound and bent. Nanotube separation, which may have a certain success rate for carbon nanotube forests with higher density and more entanglements, but for low-density and low-entangled carbon nanotube arrays that grow parallel to the substrate, due to the combination of carbon nanotubes and high elastic film When the attractive force between the carbon tubes and the silicon wafer is greater than that between the carbon nanotubes and the silicon wafer, the carbon nanotubes will adhere to the high elastic film, resulting in a substantial loss of the carbon tube density. Density-enhancing challenges for carbon nanotube arrays grown parallel to substrates

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