A kind of preparation method of crater-shaped patterned sapphire substrate

A technology for patterning sapphire and sapphire substrates, which is applied to the photolithographic process of the patterned surface, optical mechanical equipment, instruments, etc., and can solve the problems of high cost of imprinting templates and restrictions on the commercial application of nanoimprinting

Active Publication Date: 2018-03-30
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the method of preparing VPSS using nanoimprint technology, since the size of the imprint template pattern is on the order of submicron, electron beam exposure technology is generally required to prepare it, resulting in high cost of imprint template, which greatly limits the commercial application of nanoimprint.

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  • A kind of preparation method of crater-shaped patterned sapphire substrate
  • A kind of preparation method of crater-shaped patterned sapphire substrate
  • A kind of preparation method of crater-shaped patterned sapphire substrate

Examples

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Embodiment 1

[0059] In this embodiment, the sapphire substrate is wet-etched, and the hard mask is used as the mask. The method for preparing the crater-type patterned sapphire substrate of this embodiment includes the following steps:

[0060] 1) Surface cleaning and anti-sticking treatment for commercial PSS: the profile of PSS is as figure 1 As shown, the micron PSS pattern 31 on the sapphire substrate is a triangular arrangement of round packets, forming an array of protrusions. The bottom diameter of the round packets is 2 microns, the height is 1.5 microns, and the period is 3 microns; trimethyl fluorosilane is used as the resistance Adhesive, soak the PSS in the anti-adhesive for 1-10 minutes after cleaning, and form a trimethylfluorosilane monomolecular anti-adhesive layer 4 on the surface of the PSS after drying, such as figure 2 As shown, and volatilize excess molecules.

[0061] 2) Use hot embossing to transfer the micron PSS pattern 31 to the intermediate polymer template IPS: Use t...

Embodiment 2

[0069] In this embodiment, the sapphire substrate is dry-etched, and the hard mask is used as the mask. The method for preparing the crater-shaped patterned sapphire substrate of this embodiment includes the following steps:

[0070] 1) Same as Example 1.

[0071] 2) Same as Example 1.

[0072] 3) Use acetone, ethanol and deionized water to clean the surface of the sapphire substrate 1 successively. After cleaning, a layer of hard mask 211 with high selectivity ratio is deposited on the surface of the sapphire substrate, such as Ni, Mo, W, etc. The thickness is 100 nanometers; then, 150-500 nanometers thick nano-imprint glue is spin-coated on the hard mask; for hard masks with poor adhesion, spray on the hard mask before coating the nano-imprint glue Corresponding tackifier; after spin-coating nanoimprint adhesive 210, pre-baked under high temperature conditions at 100°C for 5 minutes.

[0073] 4) Same as Example 1

[0074] 5) Remove the residual glue produced after the nanoimprinting...

Embodiment 3

[0078] In this embodiment, dry etching is used to etch the sapphire substrate, and nanoimprinting glue is used as a mask. The preparation method of the crater-shaped patterned sapphire substrate of this embodiment includes the following steps:

[0079] 1) Because nanoimprinting glue is used as a mask in step 5), and the selection ratio of nanoimprinting glue to sapphire etching is small, the annular protrusions need to be higher than the unimprinted glue layer by more than 1 micron, so It is necessary to select a PSS with a steep side wall of the protrusion, an angle of 60° to 80° with the substrate, and a height of the protrusion of 1.5 to 2 microns as a template, and the others are the same as in the first embodiment.

[0080] 2) Same as Example 1.

[0081] 3) Use acetone, ethanol and deionized water to clean the surface of the sapphire substrate 1. After cleaning, spin-coating a nanoimprinting glue with a high selection ratio as a mask on the sapphire substrate. The thickness of t...

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Abstract

The invention discloses a crater-type graphical sapphire substrate and a preparation method thereof. An ordinary commercial micrometer PSS substrate is used as an imprint template, rather than a customized imprint template is used, patterns are simple, the expense is low, and the problem that the imprint template is difficult to prepare and the cost is high can be ingeniously solved; meanwhile, an annular mask is prepared by utilizing a nanoimprint technology, a high-quality VPSS can be acquired by combining a sapphire etching technology, and the commercialization of the VPSS can be facilitated; by adopting the secondary imprint method and the IPS technology, the patterns on the imprint template are prevented from being directly transferred onto a nano imprint adhesive which is coated on an epitaxial slice in a spinning mode, and the breaking of the template can be avoided; STU is collectively imprinted by adopting hot pressing and ultraviolet imprinting, so that the output efficiency and repeatability can be improved. Compared with the ordinary micrometer PSS, the crater-type graphical sapphire substrate has more lateral epitaxial components and larger reflection area, so that the improvement of the light emitting efficiency of the LED can be better facilitated.

Description

Technical field [0001] The invention relates to a patterned sapphire substrate PSS technology, in particular to a crater type patterned sapphire substrate prepared by a nano-imprint method and a preparation method thereof. Background technique [0002] The patterned sapphire substrate PSS is a sapphire substrate with periodic fine structure patterns on the surface using a certain process. Generally, there is a large lattice mismatch (up to 16%) and thermal expansion coefficient mismatch (34%) between the sapphire substrate and the GaN material, which will produce a large number of defects during the epitaxy process, causing an increase in non-radiative recombination centers and an increase in reaction. Adverse effects such as leakage current reduce the internal quantum efficiency and reliability of the device; at the same time, due to the large difference between the refractive index of sapphire (about 1.7) and the GaN material (about 2.5), the photons generated in the active are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L33/00H01L33/22H01L33/16
Inventor 陈志忠蒋盛翔姜显哲付星星姜爽于彤军张国义
Owner PEKING UNIV
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