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Manufacturing method of pnbzt ferroelectric thin film and composite electronic parts

一种铁电薄膜、制造方法的技术，应用在固定电容的零部件、电气元件、固定电容器电介质等方向，能够解决未公开铁电薄膜特性等问题，达到减少泄漏电流、电特性和寿命可靠性优异的效果

Active Publication Date: 2018-04-20
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Namely, "Effect of Nb Doping on Highly{100}-Textured PZT Films Grown on CSD-Prepared PbTiO 3 Seed Layers” does not disclose the technology of improving the characteristics of ferroelectric thin films by doping Nb at a high concentration

Method used

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  • Manufacturing method of pnbzt ferroelectric thin film and composite electronic parts
  • Manufacturing method of pnbzt ferroelectric thin film and composite electronic parts
  • Manufacturing method of pnbzt ferroelectric thin film and composite electronic parts

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0052] As a composition for forming a PZT ferroelectric thin film for forming a crystallization-promoting layer, a metal combination ratio of 115 / 53 / 47 (Pb / Zr / Ti) was prepared, and a precursor concentration was diluted with 1-butanol as a solvent ( The total of the Pb source, the Zr source, and the Ti source) was adjusted to a PZT sol-gel solution (manufactured by Mitsubishi Materials Corporation, product name: PZT-E1) of 12% by mass in terms of oxides. And, as a composition for forming a PNbZT ferroelectric thin film, prepare a metal combination ratio of 115 / 8 / 47.8 / 44.2 (Pb / Nb / Zr / Ti), and use 1-butanol as a solvent to dilute the precursor concentration ( The total of Pb source, Nb source, Zr source, and Ti source) was adjusted to a PNbZT sol-gel solution (manufactured by Mitsubishi Materials Corporation, product name: PNbZT-E1) at an oxide conversion rate of 15% by mass. That is, in this composition, 8 atomic % of Nb is contained in the total 100 atomic % of B site atoms (Zr,...

Embodiment 1-2、1-3 and comparative example 1-1～ comparative example 1-3

[0056] A PNbZT ferroelectric thin film was formed on the lower electrode in the same manner as in Example 1-1, except that the coating amount of the PZT sol-gel liquid was adjusted so that the thickness of the crystallization promoting layer was as shown in Table 1 below. In addition, in Comparative Example 1-1, the coating amount of the PZT sol-gel solution was set to 0, that is, the crystallization-promoting layer was not formed, but the PNbZT sol-gel solution was directly coated on the lower electrode, and in the same manner as in Example 1-1 The same conditions for pre-sintering, firing, etc., in order to form PNbZT ferroelectric thin film.

Embodiment 2-1、2-2 and comparative example 2-1、 comparative example 2-2

[0058] In addition to changing the addition amount of Nb in the crystallization promotion layer to the ratio shown in Table 1 below by changing the addition composition when manufacturing the above-mentioned PNbZT sol-gel liquid, the same method as in Example 1-1 was formed on the lower electrode. PNbZT ferroelectric thin film.

[0059]

[0060] Regarding the PNbZT ferroelectric thin films formed in Examples 1-1 to 2-2 and Comparative Examples 1-1 to 2-2, the thickness of the crystallization promoting layer and the PNbZT ferroelectric thin film, the crystallization of the lower electrode and the crystallization promoting layer Orientation, film structure of PNbZT ferroelectric thin film (with or without cracks), electrical characteristics (relative permittivity), and leakage current density were evaluated. These results are shown in Table 1 below.

[0061] (1) Thickness: The cross-sectional thickness (total thickness) of the crystallization-promoting layer before forming th...

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Abstract

The invention provides a method for manufacturing a PNbZT ferroelectric thin film and a composite electronic component. In this method, a composition for forming a Nb-free PZT ferroelectric thin film is coated on a lower electrode (11) formed on a substrate (10), pre-sintered, and fired to crystallize it, thereby A crystallization promoting layer (12) with a thickness of 45 to 90 nm is formed, and a composition for forming a PNbZT ferroelectric thin film is coated on the crystallization promoting layer (12) formed above to form a coating film (13a) of PNbZT. After the coating film (13a) is pre-sintered, it is fired to crystallize it, thereby forming a PNbZT ferroelectric thin film on the above-mentioned lower electrode (11), wherein, in the PNbZT ferroelectric thin film, the 4-10 atomic % of Nb is contained in the total 100 atomic % of Zr and Ti contained perovskite B-site atoms.

Description

technical field [0001] The invention relates to a manufacturing method of a PNbZT ferroelectric thin film. In detail, the present invention relates to a method of forming a PNbZT ferroelectric thin film used for a dielectric layer of a thin film capacitor and the like by a sol-gel method. More specifically, it relates to a method in which PZT ferroelectric thin films are doped at a high concentration without Nb being doped with silicon etc. The manufacturing method of the PNbZT ferroelectric thin film, etc. [0002] This application claims priority to Japanese Patent Application No. 2013-063179 for which it applied on March 26, 2013, and uses the content here. Background technique [0003] It is known that, for example, when a PZT-based ferroelectric thin film formed of a perovskite-type oxide such as lead zirconate titanate (hereinafter referred to as "PZT") is formed by a chemical solution deposition method (Chemical Solution Deposition, CSD method) such as a sol-gel met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/12
CPCH01L21/02197H01L21/022H01L21/02282H01L21/02304C23C14/088C23C14/5806C23C18/1216C23C18/1225C23C18/1241C23C18/1254Y10T428/26H01L28/56B05D1/38B05D3/0254
Inventor 土井利浩樱井英章曽山信幸
Owner MITSUBISHI MATERIALS CORP
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