Si-apd photodetector based on micro-nano structure and its preparation method
A micro-nano structure and photodetector technology, applied in the field of photodetection, can solve the problems of high price, low responsivity, and large forbidden band width of silicon materials, and achieves improved responsivity and quantum efficiency, good processing repeatability, and preparation. Simple process effect
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[0037] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0038] like figure 1As shown, it includes a P-type Si substrate 1 , an N+ region 2 , an N region 3 , an upper end electrode 4 and a lower end electrode 5 . P-type Si substrate 1 can adopt high-resistance Si single wafer; N region 3 can adopt phosphorus diffusion or ion implantation; micro-nanostructure silicon layer N+ region 2 can be formed on the N+ region by phosphorus diffusion doping or ion implantation. printed and etched. The novel Si-APD photodetector fabricated in this way has the characteristics of high responsivity and near-infrared wide spectral response with micro-nano structured silicon layer and guard ring.
[0039] A kind of Si-APD photodetector based on micro-nano structure, specifically comprises the following steps:
[0040] Prepare the surface clean and dry silicon single wafer substrate material;
[0041] Grind and ...
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