A double-layer gate dielectric thin film transistor with electrochromic properties

Abstract

The invention relates to the technical field of semiconductor thin film transistors and electrochromism electronic devices, in particular to a double-layer gate dielectric thin film transistor with the electrochromism characteristic and a manufacturing method of the double-layer gate dielectric thin film transistor. According to the electrochromism principle, when voltage is applied to the transistor, tungsten oxide in the transistor is excited to change color, the electrochromism device is designed according to the phenomenon that the light-transmittance characteristic of the transistor changes, the silicon dioxide with the proton conductive characteristic serves as an ion storage layer, protons needed by color change are provided for electrochromism, the tungsten oxide and the silicon dioxide both serve as the grate dielectric of the thin film transistor, and the double-layer gate dielectric thin film transistor with the electrochromism characteristic can be manufactured.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film transistors and electrochromic electronic devices, in particular to an electrochromic double-layer gate dielectric thin film transistor and a manufacturing method thereof. Background technique [0002] A thin film transistor is a field effect device composed of a semiconductor thin film, a thin film electrode and a gate insulating layer. It uses an electric field to regulate the Fermi level position of the semiconductor material and then regulates its conductivity. Therefore, it can be used as an active matrix organic light-emitting diode and thin film The core components of drive circuits such as transistors and liquid crystal displays; the carrier mobility of traditional amorphous silicon films is low, and it is difficult to provide large drive currents required by light-emitting devices; polysilicon films have intercrystalline boundaries, and the grain size varies First-class pr...

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Problems solved by technology

[0002] A thin film transistor is a field effect device composed of a semiconductor thin film, a thin film electrode and a gate insulating layer. It uses an electric field to regulate the Fermi level position of the semiconductor material and then regulates its conductivity. Therefore, it can be used as an active matrix organic light-emitting diode and thin film The core components of drive circuits such as transistors and liquid crystal displays; the carrier mobility of traditional amorphous silicon films is low, and it is difficult to provide large drive currents required by light-emitting devices; polysilicon films have intercrystalline boundaries, and the grain size varies First-class problems lead to poor uniformity of polysilicon thin film transistors and high manufacturing costs; organic transistor technology is still immature, and its carrier mobility, stability and other issues need to be further considered; in recent years, wide bandgap oxide semiconductor thin film transistors have High mobility, low temperature process, good compatibility with flexible substrates, large-scale production, low cost and other advantages, have broad application prospects in smart cards, electronic tags, electronic paper, memory, sensors and active matrix displays, etc. Therefore, it has aroused great research interest of experts at home and abroad. Wide bandgap oxide semiconductor thin film transistors usually require a relatively large operating voltage to obtain high output current and high mobility; One of the research hotspots; low-voltage oxide thin film transistors can effectively reduce the power loss of devices and circuits, and have potential application value in the field of portable microelectronics

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