A kind of metal oxide TFT device and manufacturing method

Abstract

The present invention is applicable to the technical field of electronic devices, and provides a method for manufacturing a metal oxide TFT device, comprising selecting a substrate and preparing a gate on the substrate; sequentially disposing an insulating layer, a semiconductor layer and a photoresist on the gate; The gate is a mask, which is exposed from the back of the substrate, and the photoresist covering the channel part of the semiconductor layer is retained; the electrode layer is deposited on the semiconductor layer and the photoresist; the photoresist and the electrode layer covering the photoresist are peeled off to expose channel; etch the electrode layer and semiconductor layer to form an isolated source and drain; deposit a passivation layer to lead out the source and drain. In the present invention, the gate is used as a mask to realize self-alignment through back exposure and photoresist stripping, the process is simple and the alignment accuracy is high, the parasitic capacitance is weakened, the performance of the device is improved, and no etching barrier layer is required. The process is simplified, the bad influence of the etching barrier layer on the semiconductor channel is avoided, and the alignment of the mask plate is no longer a key alignment requirement, thereby reducing the manufacturing difficulty.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, in particular to a metal oxide TFT device and a manufacturing method thereof. Background technique [0002] Metal oxide thin film transistor (TFT) is a basic circuit component device that can be widely used in various electronic systems, and it has many advantages, such as high electron mobility, low temperature manufacturing process, high stability, high transparency, etc. . Such as figure 1 As shown, in the traditional TFT manufacturing process, the alignment of the gate (Gate) 101, the source (Source) 102, and the drain (Drain) 103 of the TFT device is done manually or mechanically by using two different mask plates. achieved by optical alignment. Due to the limitation of the accuracy of the alignment equipment and other factors, this method will cause a certain overlap between the source 102, the drain 103 and the gate 101, resulting in a large gate-source parasitic capacitance ...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for manufacturing a metal oxide TFT device, which aims to solve the problem that the traditional method is prone to produce parasitic capacitance and the process is complex

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