Self-aligned metal oxide thin film transistor device and manufacturing method

Abstract

Provided is a method for producing a self-aligned metal oxide thin-film transistor (TFT) component, which comprises: selecting a substrate (11), and preparing a gate electrode (12) on the substrate (11); arranging an insulation layer (13), a transparent electrode layer (14) and photoresist (15) in sequence on the gate electrode (12); using the gate electrode (12) as a mask, and exposing from a back of the substrate (11) to form source and drain electrodes (141, 142) that are aligned with the gate electrode (12); depositing a metal oxide semiconductor layer (17) on the transparent electrode layer (14); etching the semiconductor layer (17) and the source and drain electrodes (141, 142) to make outer ends of the source and drain electrodes (141, 142) come out of the metal oxide semiconductor layer; depositing a passivation layer (18), and leading out the source and drain electrodes (141, 142). The component uses a transparent conductor as an electrode layer, uses a bottom gate as a mask to perform back exposure, and etches the source and drain electrodes, which implements self-alignment between the source and drain electrodes and the gate electrode, effectively reduces parasitic capacitance, and improves component performance. The component is in a bottom gate and bottom contact structure. No etching blocking layer needs to be fabricated, simplifying a process, reducing usage of photolithographic masks, improving efficiency, and improving electrical characteristics of the component.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, in particular to a self-aligned metal oxide thin film transistor device and a manufacturing method thereof. Background technique [0002] Metal oxide thin film transistor (TFT) is a basic circuit component device that can be widely used in various electronic systems, and it has many advantages, such as high electron mobility, low temperature manufacturing process, high stability, high transparency, etc. . Such as figure 1 As shown, in the traditional TFT manufacturing process, the alignment of the gate (Gate) 101, the source (Source) 102, and the drain (Drain) 103 of the TFT device is done manually or mechanically by using two different mask plates. achieved by optical alignment. Due to the limitation of the accuracy of the alignment equipment and other factors, this method will cause a certain overlap between the source 102, the drain 103 and the gate 101, resulting in a large gate...

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Problems solved by technology

[0007] The purpose of the present invention is to provide a method for manufacturing a self-aligned metal oxide thin film transistor device, which aims to solve the problem that the traditional method is prone to produce parasitic capacitance and the process is complex

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