Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CdSe quantum dot and preparation method thereof

A quantum dot, c4h5cdo4·2h2o technology, applied in chemical instruments and methods, luminescent materials, binary selenium/tellurium compounds, etc., can solve the problems of unfavorable large-scale production, flammable solvents, explosives, etc., and achieve good uniform particle size properties, low cost of preparation, and low reaction temperature

Active Publication Date: 2014-09-10
南京点援微材料科技有限公司
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] CdSe quantum dots are prepared by traditional thermal injection of precursors. In order to improve the decomposition of the compound, its cadmium and selenium precursors are brought to the respective growth medium at high temperature for the reaction of these two precursors. This synthesis route is usually at high temperature. However, the lack of reproducibility of the particle size distribution at a higher synthesis temperature limits the luminescence performance of semiconductor quantum dots.
It is difficult to control the reaction with uniform particle size distribution due to the deviation of thermodynamic equilibrium at high temperature
Moreover, the various solvents used in this method are flammable, explosive and highly toxic, and the overall cost is high, which is not conducive to large-scale production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CdSe quantum dot and preparation method thereof
  • CdSe quantum dot and preparation method thereof
  • CdSe quantum dot and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Preparation of quantum dots

[0021] (1) Preparation of selenium-trioctylphosphine solution: Dissolve 0.1570mg of selenium powder in 6ml of trioctylphosphine solution, and then ultrasonicate at 60°C for 30 minutes to obtain a clear solution;

[0022] (2) Place 0.106612mg 0.4mmol / l cadmium acetate dihydrate in a round bottom flask, add 10ml of 1-octadecene, 0.1ml of oleic acid and 1ml of n-octylamine, and put these mixtures at 130 Stir at ℃ for 30 minutes;

[0023] (3) 2ml of selenium-trioctylphosphine solution was added to the mixture, and the reaction was maintained at 130°C for 15 minutes in a nitrogen atmosphere;

[0024] (4) Purify the reactant obtained in step (3) with a hexane / methanol solution, and then centrifuge and precipitate with acetone at 10,000 rpm to obtain CdSe quantum dots.

Embodiment 2

[0026] Inspection of CdSe Quantum Dots

[0027] (1) Change the reaction time (2min, 5min, 10min, 15min, 20min, 30min), keep other conditions unchanged, prepare CdSe quantum dots, dissolve CdSe quantum dots with n-hexane (or toluene, chloroform and other organic solvents), and mix different Reaction time The synthesized CdSe quantum dot solution is placed under a 365nm wavelength ultraviolet lamp, and obvious fluorescence emission can be seen, such as figure 1 shown;

[0028] (2) Dissolve the quantum dots prepared in Example 1 in n-hexane (or toluene, chloroform and other organic solvents), and use the F-4600 fluorescence spectrophotometer to obtain its fluorescence (PL) spectrum, which has a symmetrical fluorescence emission peak, Such as figure 2 As shown, the half-width height of the fluorescence emission peak is 34.6nm;

[0029] (3) The quantum dot solution prepared in Example 1 was dispersed on a carbon-coated copper grid, and then dried at room temperature to obtain a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Scaleaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a CdSe quantum dot, and belongs to the technical field of nanometers. According to the method, a Cd precursor solution and an Se precursor solution are formed by using Se powder as an Se source, cadmium acetate dihydrate (C4H5CdO4.2H2O) used as a cadmium source, trioetylphosphine used as a solvent of the Se powder, and oleic acid, 1-octadecene and n-octylamine used as a solvent of the cadmium acetate dihydrate; reacting the Cd precursor solution and the Se precursor solution at low temperature (90-160 DEG C) to obtain the CdSe quantum dot. The precursors are quickly injected and need not to react at high temperature, medicinal materials are treated in the atmosphere, so that the requirement to reaction conditions is greatly reduced, and the obtained CdSe quantum dot has the advantages of single-dispersion and narrow granularity distribution, high fluorescent strength and long fluorescent service life; the synthesized CdSe quantum can be applied to the fields of luminescent devices, photovoltaic devices, biomedical imaging and the like.

Description

technical field [0001] The invention belongs to the field of nanometer material preparation, and in particular relates to a CdSe quantum dot and a preparation method thereof. Background technique [0002] Quantum dot (Quantum dot, QD for short) is a semiconductor nanocrystal whose radius is smaller than or close to the radius of Bohr excitons. Quantum dots have the characteristics of good photostability, wide excitation spectrum and narrow emission spectrum, long fluorescence lifetime, etc., and CdSe quantum dots are very suitable for visual observation because the emission wavelength covers the entire visible light range, so it has attracted attention in recent years. Attracted attention, it can be used for applications in various fields, including light-emitting devices, photovoltaic devices, and biomedical imaging. [0003] CdSe quantum dots are prepared by traditional thermal injection of precursors. In order to improve the decomposition of the compound, its cadmium and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B19/04C09K11/88
Inventor 李福山郭太良吴家祺查得斯科马来吴薇
Owner 南京点援微材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com