Polar ingan nanowire material and fabrication method based on m-plane gan

A fabrication method and nanowire technology, applied in the field of microelectronics, can solve the problems of short length, low growth rate and uneven thickness of nanowires, and achieve the effect of increasing growth rate and improving direction consistency.

Inactive Publication Date: 2017-03-29
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The InGaN nanowires prepared by this method are perpendicular to the bottom and have good direction consistency. However, due to the short length of the nanowires, uneven thickness, and non-polar materials, the polarization characteristics cannot be used, so it is not suitable for light-emitting devices and pressure sensors.
[0005] In 2007, X.M.Cai et al prepared InGaN nanowires using metal catalysts by chemical vapor deposition CVD method, see Cai X M, Ye F, Jing S Y, et al.CVD growth of InGaN nanowires[J].Journal of Alloys and Compounds, 2009, 467(1):472-476. Although the preparation cost of this method is low, the device application of InGaN nanowires is limited due to its long growth time, low growth rate and poor direction uniformity

Method used

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  • Polar ingan nanowire material and fabrication method based on m-plane gan
  • Polar ingan nanowire material and fabrication method based on m-plane gan

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1, making a polar InGaN nanowire material with a TiN layer thickness of 15 nm.

[0031] Step 1, put the m-plane GaN substrate with a thickness of 1000 μm into the electron beam evaporation table E-Beam, in a vacuum of 1.8×10 -3 Under the condition of Pa, evaporate a layer of 15nm Ti metal film at a speed of 0.2nm / s.

[0032] Step 2, place an m-plane GaN substrate with Ti metal in the metal organic chemical vapor deposition MOCVD reaction chamber, heat the reaction chamber after evacuating to make the temperature reach 1200 ° C, under the condition that the reaction chamber pressure is 760 Torr, simultaneously The flow rate of hydrogen and ammonia gas in the reaction chamber is both 10000 sccm for 60 minutes, so that most of the metal Ti reacts with ammonia gas, and a TiN layer with a thickness of 15 nm is formed on the m-plane GaN substrate, and a small part of it does not react with ammonia gas. The reacted metal Ti is randomly distributed on the surface of th...

Embodiment 2

[0035] Example 2, making a polar InGaN nanowire material with a TiN layer thickness of 2 nm.

[0036] Step A, put the m-plane GaN substrate with a thickness of 5 μm into the electron beam evaporation table E-Beam to evaporate a layer of 8nm Ti metal film, and the process conditions are: the vacuum degree is 1.8×10 -3 Pa, the evaporation rate is 0.2nm / s;

[0037] Step B, placing the m-plane GaN substrate with Ti metal in the MOCVD reaction chamber, setting the pressure and heating temperature of the reaction chamber after vacuuming, and then feeding hydrogen and ammonia into the reaction chamber at the same time for a period of time, so that most of the Metal Ti reacts with ammonia gas to form a TiN layer with a thickness of 2nm on the m-plane GaN substrate, and a small part of metal Ti that has not reacted with ammonia gas is randomly distributed on the surface of the TiN layer. The process conditions are: The pressure is 20 Torr, the flow rates of hydrogen and ammonia are bo...

Embodiment 3

[0040] Example 3, preparing a polar InGaN nanowire material with a TiN layer thickness of 8 nm.

[0041] In the first step, a metal Ti film is evaporated.

[0042] The m-plane GaN substrate with a thickness of 1 μm was placed in the E-Beam of the electron beam evaporation station, and the vacuum degree was 1.8×10 -3 Under the condition of Pa, a layer of 2nm Ti metal film was evaporated at a speed of 0.2nm / s.

[0043] The second step is to prepare a TiN layer.

[0044] Put the m-plane GaN substrate with Ti metal in the MOCVD reaction chamber, set the pressure in the reaction chamber to 40Torr after vacuuming, and set the heating temperature to 900°C, and then feed hydrogen gas with a flow rate of 2000sccm and ammonia with a flow rate of 3000sccm into the reaction chamber gas for 8 minutes, so that most of the metal Ti reacts with ammonia gas to form a TiN layer with a thickness of 8nm on the m-plane GaN substrate, and a small part of residual metal Ti that has not reacted wit...

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Abstract

The invention discloses a polarity InGaN nanowire material based on GaN of the m face and a manufacturing method thereof. The polarity GaN nanowire material mainly solves the problems that growing efficiency of the InGaN nanowire is low, and direction consistency is poor in growth of a conventional polarity InGaN nanowire. The growing steps of the polarity InGaN nanowire material comprises the following steps: (1) a layer of 2-15nm metal Ti is evaporated on a GaN substrate of the m face; (2) the GaN substrate of the m face with the metal Ti is arranged in an MOCVD reaction chamber, and hydrogen and ammonia gas are fed into the reaction chamber, so that nitridation is conducted on part of the metal Ti on the GaN substrate of the m face to form TiN, and part of the metal Ti not subjected to nitridation remains; (3) an indium source, a gallium source and ammonia gas are fed in the MOCVD reaction chamber, a polarity InGaN nanowire parallel to the substrate grows on the TiN layer with the metal Ti not subjected to nitridation serving as a catalyst, wherein the polarity InGaN nanowire and the substrate are consistent in direction. The polarity InGaN nanowire material based on the GaN of the m face has the advantages that the growing rate is high, and direction consistency is good. The polarity InGaN nanowire material can be used for manufacturing polarity InGaN nano-devices with high performance.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a growth method of semiconductor materials, in particular to a metal-organic compound chemical vapor phase epitaxy growth method of polar InGaN nanowires on m-plane GaN, which can be used to manufacture InGaN nanostructure semiconductor devices. [0002] technical background [0003] Because the InGaN alloy has a forbidden band width of 0.7-3.4eV according to its composition at room temperature, it almost completely covers the entire solar spectrum and has the characteristics of high luminous efficiency. It is usually used as the active layer of optoelectronic devices such as LEDs and LDs. It is not only one of the ideal materials for making high-efficiency photoelectric devices, but also an ideal material for making high-performance solar cells, so it has received extensive attention. With the continuous development of molecular beam epitaxy (MBE) and metal organic chemica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/267H01L21/205
CPCH01L21/02389H01L21/02433H01L21/0254H01L21/02603H01L21/0262H01L29/2003H01L29/201H01L29/205
Inventor 姜腾许晟瑞郝跃张进成张春福林志宇雷娇娇陆小力
Owner XIDIAN UNIV
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